Cluster Model Study of the Incorporation Process of Excess Arsenic into Interstitial Positions of the GaAs Lattice
Keyword(s):
AbstractWe study an As2 molecule approaching a planar, non-reconstructed, As terminated GaAs(001) surface by using a suitable cluster and quantum mechanical ab-initio calculation methods. During our calculations the As2 molecule is always oriented perpendicularly to the surface and its bonding length may vary. We find a metastable position below the growing surface which facilitates the incorporation of the leading As atom into an interstitial position of the crystal during growth. We give a first model for this incorporation process.
1998 ◽
Vol 120
(49)
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pp. 12895-12902
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2009 ◽
Vol 16
(S6)
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pp. 491-501
Ab initio cluster model study of electric field effects for terminal and bridge bonded CO on Pt(100)
1999 ◽
Vol 45
(4-5)
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pp. 639-644
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1999 ◽
Vol 103
(25)
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pp. 5246-5255
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