Cluster Model Study of the Incorporation Process of Excess Arsenic into Interstitial Positions of the GaAs Lattice

1999 ◽  
Vol 584 ◽  
Author(s):  
T. Marek ◽  
S. Kunsági-Máté ◽  
H. P. Strunk

AbstractWe study an As2 molecule approaching a planar, non-reconstructed, As terminated GaAs(001) surface by using a suitable cluster and quantum mechanical ab-initio calculation methods. During our calculations the As2 molecule is always oriented perpendicularly to the surface and its bonding length may vary. We find a metastable position below the growing surface which facilitates the incorporation of the leading As atom into an interstitial position of the crystal during growth. We give a first model for this incorporation process.

1998 ◽  
Vol 17 (21) ◽  
pp. 4573-4577 ◽  
Author(s):  
Yoko Tanaka ◽  
Masahiko Hada ◽  
Atsushi Kawachi ◽  
Kohei Tamao ◽  
Hiroshi Nakatsuji

1999 ◽  
Vol 45 (4-5) ◽  
pp. 639-644 ◽  
Author(s):  
Daniel Curulla ◽  
Anna Clotet ◽  
Josep M Ricart ◽  
Francesc Illas

1993 ◽  
Vol 280 (3) ◽  
pp. A148
Author(s):  
M. Fernández-García ◽  
J.C. Conesa ◽  
F. Illas

1999 ◽  
Vol 579 ◽  
Author(s):  
C.M.J. Wijers ◽  
P.L. De Boeij

ABSTRACTWe have calculated the reflectance anisotropy for the GaAs (110) surface using the discrete cellular method. This method extends the range of application of standard discrete dipole calculations by incorporating nonlocal polarizabilitites. The method adds a second quantum mechanical channel of nonlocality, which turns out to be necessary and yields very good agreement between theory and experiment.


1999 ◽  
Vol 103 (25) ◽  
pp. 5246-5255 ◽  
Author(s):  
Daniel Curulla ◽  
Anna Clotet ◽  
Josep M. Ricart ◽  
Francesc Illas

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