Ain Thin Films Prepared by Reactive Ion Beam Coating

1999 ◽  
Vol 585 ◽  
Author(s):  
L. L. Cheng ◽  
Y H. Yu ◽  
B. Sundaravel ◽  
E. Z. Luo ◽  
S. Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Ion Beam ◽  
Wide Band ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Preparation Conditions ◽  
Electron Field ◽  
Electron Field Emission Properties

AbstractAluminum Nitride (AIN) is a promising material for a variety of technological applications because it has many exceptional properties, such as wide band gap (WBG) and negative electron affinity (NEA). AIN thin films were prepared by Reactive Ion Beam Coating. The properties of the AIN thin films may be a function of one of the preparation conditions: the beam energy. We used the non-Rutherford backscattering (non-RBS) and Auger Electron Spectroscopy (AES) results to analyze the composition of the AIN thin films. Atomic Force Microscopy (AFM) was applied to study the morphology of films. On the other hand, electron field emission properties were also studied to find the relationship between the compositional, morphological and electron field emission properties of the AIN thin films.

scholarly journals Effects of applying stress on the electron field emission properties in amorphous carbon thin films

2005 ◽  
Vol 86 (23) ◽  
pp. 232102 ◽  
Author(s):  
C. H. P. Poa ◽  
S. R. P. Silva ◽  
R. G. Lacerda ◽  
G. A. J. Amaratunga ◽  
W. I. Milne ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Carbon Thin Films ◽  
Electron Field Emission Properties

Effects of Sulfur Concentration on the Electron Field Emission Properties of Nanocrystalline Carbon Thin Films

2001 ◽  
Vol 675 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
B. L. Weiss ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Hydrogen Sulfide ◽  
Field Emission ◽  
Electron Field Emission ◽  
Sulfur Concentration ◽  
Electronic Band ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Electron Field Emission Properties

ABSTRACTThe electron field emission properties of sulfur-assisted nanocrystalline carbon (n-C: S) thin films grown on molybdenum substrates by hot-filament CVD technique using methane-hydrogen (CH4/H2) and hydrogen sulfide-hydrogen (H2S/H2) gas mixtures were investigated. The field emission properties of the S-assisted films are reported as a function of sulfur concentration. The incorporation of S caused structural and microstructural changes that were characterized with SEM, AFM and Raman spectroscopy (RS). The S-assisted films show smoother surfaces and smaller grains than those grown without. The lowest turn-on field measured was around 4.5 – 5.0 V/μm films grown with 500 ppm of hydrogen sulfide and at 900 °C. The electron field emission properties of S-assisted films were also compared to those grown without sulfur (i.e., intrinsic). An inverse correlation between the threshold field (Ec) and sulfur concentration was found. These finding are attributed to defect induced states within the electronic band structure.

The effect of argon on the electron field emission properties of α-C:N thin films

Carbon ◽  
2003 ◽  
Vol 41 (6) ◽  
pp. 1143-1148 ◽  
Author(s):  
X.W. Liu ◽  
L.H. Chan ◽  
W.J. Hsieh ◽  
J.H. Lin ◽  
H.C. Shih
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Electron Field Emission Properties
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