Nanomechanical Properties of Amorphous Carbon and Carbon Nitride Thin Films Prepared by Shielded Arc Ion Plating

1999 ◽  
Vol 593 ◽  
Author(s):  
N. Tajima ◽  
H. Saze ◽  
H. Sugimura ◽  
O. Takai

ABSTRACTHydrogen free amorphous carbon (a-C) and carbon nitride (a-C:N) were synthesized by means of shielded arc ion plating in which a shielding plate was inserted between a target and a substrate in order to reduce macroparticle deposition onto the substrate. Using a graphite target as a cathode, thin films of a-C and a-C:N were prepared in an arc discharge plasma of argon or nitrogen gas, respectively, at a pressure of 1 Pa. Based on nanoindentation, mechanical properties of these films were studied in relation to substrate bias voltage (Vs). The a-C films prepared at Vs ranging from -50 to -200 V consisted of diamond-like phase and showed hardness higher than 20 GPa with its maximum of 35 GPa at Vs = -100 V. However, hardness of the films deposited at Vs < 300 V was less than 7 GPa indicating that the films were converted to graphite-like phase due to excessive ion impact in Ar plasma. Wear resistance of the a-C films was closely related to their hardness. Namely, a harder a-C film was more wear resistant. On the contrary, hardness of the a-C:N films was less dependent on Vs. It remained in the range of 10 to 15 GPa and was much lower than the maximum hardness of the a-C films. Nevertheless, the wear resistance of the a-C:N films was comparable to or much better than the a-C films. In particular, the a-C:N film prepared at Vs = -300 V was so wear resistant that the film showed no apparent wear when rubbed with a diamond tip less than 100 nm in tip-diameter at a contact force of 20μN. The presence of β-C3N4like phase characterized by a N1 s XPS peak at 400.5 eV has found to be crucial for high wear resistance of the a-C:N films

1999 ◽  
Vol 594 ◽  
Author(s):  
N. Tajima ◽  
H. Saze ◽  
H. Sugimura ◽  
O. Takai

AbstractHydrogen free amorphous carbon (a-C) and carbon nitride (a-C:N) were synthesized by means of shielded arc ion plating in which a shielding plate was inserted between a target and a substrate in order to reduce macroparticle deposition onto the substrate. Using a graphite target as a cathode, thin films of a-C and a-C:N were prepared in an arc discharge plasma of argon or nitrogen gas, respectively, at a pressure of 1 Pa. Based on nanoindentation, mechanical properties of these films were studied in relation to substrate bias voltage (VS). The a-C films prepared at VS ranging from −50 to −200 V consisted of diamond-like phase and showed hardness higher than 20 GPa with its maximum of 35 GPa at Vs = −100 V. However, hardness of the films deposited at VS < -300 V was less than 7 GPa indicating that the films were converted to graphite-like phase due to excessive ion impact in Ar plasma. Wear resistance of the a-C films was closely related to their hardness. Namely, a harder a-C film was more wear resistant. On the contrary, hardness of the a-C:N films was less dependent on VS. It remained in the range of 10 to 15 GPa and was much lower than the maximum hardness of the a-C films. Nevertheless, the wear resistance of the a-C:N films was comparable to or much better than the a-C films. In particular, the a-C:N film prepared at VS = -300 V was so wear resistant that the film showed no apparent wear when rubbed with a diamond tip less than 100 nm in tip-diameter at a contact force of 20 μN. The presence of β-C3N4 like phase characterized by a Nls XPS peak at 400.5 eV has found to be crucial for high wear resistance of the a-C:N films.


1999 ◽  
Vol 38 (Part 2, No. 10A) ◽  
pp. L1131-L1133 ◽  
Author(s):  
Nobuhiro Tajima ◽  
Hiroki Saze ◽  
Hiroyuki Sugimura ◽  
Osamu Takai

2002 ◽  
Vol 407 (1-2) ◽  
pp. 104-108 ◽  
Author(s):  
Hiroyuki Sugimura ◽  
Yoshiki Sato ◽  
Yoshiaki Ando ◽  
Nobuhiro Tajima ◽  
Osamu Takai

2001 ◽  
Vol 52 (12) ◽  
pp. 887-890 ◽  
Author(s):  
Hiroyuki SUGIMURA ◽  
Nobuhiro TAJIMA ◽  
Kazuki KAWATA ◽  
Osamu TAKAI

2001 ◽  
Vol 142-144 ◽  
pp. 719-723 ◽  
Author(s):  
Osamu Takai ◽  
Nobuhiro Tajima ◽  
Hiroki Saze ◽  
Hiroyuki Sugimura

2005 ◽  
Vol 475 (1-2) ◽  
pp. 308-312 ◽  
Author(s):  
K.H. Lee ◽  
R. Ohta ◽  
H. Sugimura ◽  
Y. Inoue ◽  
O. Takai ◽  
...  

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