scholarly journals Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures

2000 ◽  
Vol 5 (S1) ◽  
pp. 661-667
Author(s):  
S. Bidnyk ◽  
J. B. Lam ◽  
B. D. Little ◽  
G. H. Gainer ◽  
Y. H. Kwon ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Laser Diodes ◽  
Ultra Violet ◽  
Temperature Stability ◽  
Far Field ◽  
Optically Pumped ◽  
Lasing Wavelength ◽  
Field Patterns ◽  
Low Threshold ◽  
Lasing Modes

We report on an experimental study of microstructure-based lasing in an optically pumped GaN/AlGaN separate confinement heterostructure (SCH). We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. The spacing, directionality, and far-field patterns of the lasing modes are shown to be the result of microcavities that were naturally formed in the structures due to strain relaxation. The temperature sensitivity of the lasing wavelength was found to be twice as low as that of bulk-like GaN films. Based on these results, we discuss possibilities for the development of ultra-violet laser diodes with increased temperature stability of the emission wavelength.

Microstructure-Based Lasing in GaN/AlGaN Separate Confinement Heterostructures

1999 ◽  
Vol 595 ◽  
Author(s):  
S. Bidnyk ◽  
J. B. Lam ◽  
B. D. Little ◽  
G. H. Gainer ◽  
Y. H. Kwon ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Laser Diodes ◽  
Ultra Violet ◽  
Temperature Stability ◽  
Far Field ◽  
Optically Pumped ◽  
Lasing Wavelength ◽  
Field Patterns ◽  
Low Threshold ◽  
Lasing Modes

AbstractWe report on an experimental study of microstructure-based lasing in an optically pumped GaN/AlGaN separate confinement heterostructure (SCH). We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. The spacing, directionality, and far-field patterns of the lasing modes are shown to be the result of microcavities that were naturally formed in the structures due to strain relaxation. The temperature sensitivity of the lasing wavelength was found to be twice as low as that of bulk-like GaN films. Based on these results, we discuss possibilities for the development of ultra-violet laser diodes with increased temperature stability of the emission wavelength.

Confinement factor, near and far field patterns in InGaN MQW laser diodes

2005 ◽  
Vol 242 (9) ◽  
pp. 1846-1849
Author(s):  
J. Martín ◽  
M. Sánchez
Keyword(s):  
Laser Diodes ◽  
Far Field ◽  
Field Patterns

Angled cavity photonic crystal laser diodes with tilted sidewalls for improving far-field patterns

2014 ◽  
Vol 39 (8) ◽  
pp. 2391 ◽  
Author(s):  
L. Liu ◽  
Y. Liu ◽  
H. W. Qu ◽  
Y. F. Wang ◽  
H. L. Wang ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Laser Diodes ◽  
Far Field ◽  
Field Patterns ◽  
Crystal Laser ◽  
Photonic Crystal Laser

scholarly journals Мощностные характеристики и температурная зависимость угловой расходимости излучения лазеров с приповерхностной активной областью

2018 ◽  
Vol 44 (15) ◽  
pp. 46
Author(s):  
А.Е. Жуков ◽  
Н.Ю. Гордеев ◽  
Ю.М. Шерняков ◽  
А.С. Паюсов ◽  
А.А. Серин ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Laser Crystal ◽  
Temperature Stability ◽  
Wave Mode ◽  
Planar Waveguides ◽  
Far Field ◽  
High Temperature Stability ◽  
Field Patterns ◽  
Continuous Wave Mode ◽  
Current Characteristics

AbstractResults are presented of a study of light–current characteristics and far-field patterns of emission of stripe lasers with coupled planar waveguides. This configuration makes it possible to suppress the generation of excited modes and to have a small (about 0.9 μm) depth of the active region from the surface of the laser crystal. A high-temperature stability of the angular emission divergence (34.0° ± 1.5°) in the temperature range 20–80°C is demonstrated. The largest value of the output power is limited to 12.2 W in the continuous-wave mode by the catastrophic mirror damage.

Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode

1990 ◽  
Vol 57 (16) ◽  
pp. 1608-1609 ◽  
Author(s):  
C. E. Zah ◽  
R. Bhat ◽  
K. W. Cheung ◽  
N. C. Andreadakis ◽  
F. J. Favire ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Laser Diodes ◽  
Single Quantum ◽  
Optically Pumped ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Quantum Well Laser ◽  
Low Threshold

Far-field patterns of Quantum Well, Quantum Dash, and Quantum Dot Laser Diodes

2008 ◽  
Author(s):  
Y. H. Ding ◽  
C. L. Tan ◽  
V. Hongpinyo ◽  
C. E. Dimas ◽  
Y. Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Laser Diodes ◽  
Far Field ◽  
Field Patterns ◽  
Quantum Dot Laser ◽  
Quantum Dash
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