Study of Bubble Bursting at Free Surface using Coupled Eulerian-Lagrangian Approach

2018 ◽  
Author(s):  
Digvijay Singh ◽  
Arup Kumar Das
2000 ◽  
Vol 2000.13 (0) ◽  
pp. 117-118
Author(s):  
Takashi SUZUKI ◽  
Koshi MITACHI ◽  
Ryoko NAKANO

2004 ◽  
Vol 16 (1-3) ◽  
pp. 121-127
Author(s):  
S. Vincent ◽  
E. Canot ◽  
S.-C. Georgescu

2016 ◽  
Vol 59 ◽  
pp. 616-637 ◽  
Author(s):  
Hung-Chu Hsu ◽  
Chia-Cheng Tsai

2016 ◽  
Vol 55 ◽  
pp. 1-14 ◽  
Author(s):  
B.Y. Ni ◽  
A.M. Zhang ◽  
G.X. Wu
Keyword(s):  

2021 ◽  
Vol 2021 ◽  
pp. 1-1
Author(s):  
Xiang Yu ◽  
Haifeng Gu ◽  
Weikai Yin ◽  
Qingyang Sun


Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


2016 ◽  
Author(s):  
Danica Ciric ◽  
Milica Stojanovic ◽  
Anita Drumond ◽  
Raquel Nieto ◽  
Luis Gimeno

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