Thermodynamic and Kinetic Properties of Interstitial Solid Solutions.

1983 ◽  
Author(s):  
Rex B. McLellan
Keyword(s):  
Solid Solutions ◽  
Kinetic Properties

Effect of CeO$lt;inf$gt;2$lt;/inf$gt;-based Solid Solutions on Hydrogen Storage Kinetic Properties of Mg$lt;inf$gt;2$lt;/inf$gt;Ni Alloy

2014 ◽  
Vol 29 (12) ◽  
pp. 1241
Author(s):  
ZHANG Guo-Fang ◽  
ZHANG Yang-Huan ◽  
LIU Zhuo-Cheng ◽  
XU Jian-Yi ◽  
ZHANG Yin
Keyword(s):  
Hydrogen Storage ◽  
Solid Solutions ◽  
Kinetic Properties ◽  
Ni Alloy

Subsolidus solubility between : a hydrothermal investigation

1966 ◽  
Vol 35 (273) ◽  
pp. 742-755 ◽  
Author(s):  
R. S. Bradley ◽  
P. Engel ◽  
D. C. Munro
Keyword(s):  
Phase Equilibrium ◽  
Solid Solutions ◽  
Kinetic Properties ◽  
Subsolidus Phase ◽  
Temperature Range ◽  
Subsolidus Phase Equilibrium ◽  
Geological Factors ◽  
Preliminary Study ◽  
Experimental Findings

SummaryThe subsolidus phase equilibrium of the lithiophilite-tephroite system was studied in the temperature range 500 to 900° C. The solubility of tephroite in lithiophilite is limited and increases with temperature. The reaction is very sluggish and has peculiar kinetic properties. No reverse solubility was observed. Similar asymmetry was found in the LiMgPO4-forsterite system of which a preliminary study was made. Apparent absences of silicate phosphate olivine solid solutions in nature are related to our experimental findings and to geological factors.

Kinetic Properties of the Mn1 – xGdxSe Solid Solutions

2018 ◽  
Vol 60 (9) ◽  
pp. 1691-1697
Author(s):  
O. B. Romanova ◽  
S. S. Aplesnin ◽  
A. M. Khar’kov ◽  
V. V. Kretinin ◽  
A. M. Zhivul’ko
Keyword(s):  
Solid Solutions ◽  
Kinetic Properties

Kinetic properties of p-type Mg/sub 2/Ge/sub 0.4/Sn/sub 0.6/ solid solutions

2005 ◽  
Author(s):  
M.I. Fedorov ◽  
V.K. Zaitsev ◽  
G.N. Isachenko ◽  
I.S. Eremin ◽  
E.A. Gurieva ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Kinetic Properties ◽  
P Type

Kinetic properties of p-type Mg/sub 2/Si/sub 0.4/Sn/sub 0.6/ solid solutions

2004 ◽  
Author(s):  
M.I. Fedorov ◽  
V.K. Zaitsev ◽  
I.S. Eremin ◽  
E.A. Gurieva ◽  
A.T. Burkov ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Kinetic Properties ◽  
P Type

Palladium-cerium-hydrogen solid solutions—II. Kinetic properties

1988 ◽  
Vol 36 (12) ◽  
pp. 3225-3229 ◽  
Author(s):  
M. Yoshihara ◽  
R.B. McLellan
Keyword(s):  
Solid Solutions ◽  
Kinetic Properties

Thermodynamics and kinetic properties of C in Ni-Fe-C solid solutions

1994 ◽  
Vol 55 (11) ◽  
pp. 1227-1232
Author(s):  
Rex B McLellan ◽  
Liu Yang
Keyword(s):  
Solid Solutions ◽  
Kinetic Properties

scholarly journals Study on Cu2ZnSnSe4 crystals and heterojunctions on their basis

2018 ◽  
pp. 37-43
Author(s):  
T. T. Kovaliuk ◽  
E. V. Maistruk ◽  
M. N. Solovan ◽  
I. P. Koziarskyi ◽  
P. D. Maryanchuk
Keyword(s):  
Solid Solutions ◽  
Charge Carriers ◽  
Kinetic Properties ◽  
Shunt Resistance ◽  
Recombination Mechanism ◽  
Energy Diagram ◽  
Voltage Range ◽  
Type Conductivity ◽  
Mobility Of Charge Carriers ◽  
P Type

The most promising materials for the solar radiation converters are such compounds as CdTe and Cu(In, Ga)Se2, CuIn(S, Se)2, CuGa(S, Se)2 solid solutions. However, the uneconomic nature of Cd, Te and the limited supply of In and Ga, as well as their high cost, force researchers to replace In and Ga with the more common elements of II and IV groups, namely Zn and Sn. Apart from that, researchers are now testing such new semiconductor compounds as Cu2ZnSnS4, Cu2ZnSnSe4, and solid solutions on their basis. These compounds have a band gap width (Eg ≈ 1.5 eV) close to optimal for the conversion of solar energy, a high light absorption coefficient (≈ 105cm–1), a long lifetime and a high mobility of charge carriers. Moreover, the interest in such semiconductor heterojunctions as TiO2/Cu2ZnSnS4, which have several advantages over homo-transitions, is steadily growing at present. The paper presents results studies of kinetic properties of Cu2ZnSnSe4 crystals. We fabricated n-TiO2/p-Cu2ZnSnSe4 anisotype heterojunctions, determined their main electrical parameters and built their energy diagram. The Cu2ZnSnSe4 crystals have p-type conductivity and the Hall coefficient practically independent of temperature. The temperature dependence of the electrical conductivity σ for Cu2ZnSnSe4 crystalsis metallic in character, i. e. σ decreases with increasing temperature, which is caused by a decrease in the mobility of the charge carriers with the growth of T. Thermoelectric power for the samples is positive, which also indicates the prevalence of p-type conductivity. In this study, the n-TiO2/p-Cu2ZnSnSe4 heterojunctions were produced by reactive magnetron sputtering of a thin TiO2 film on the Cu2ZnSnSe4 substrate. The energy diagram of the investigated n-TiO2/p-Cu2ZnSnSe4 anisotype heterojunctions was constructed in accordance with the Anderson model, without taking into account the surface electrical states and the dielectric layer, based on the values of the energy parameters of semiconductors determined experimentally and taken from literary sources. The authors have also investigated electrical properties of the heterojunctions: the value of the potential barrier was determined, the value of the series resistance and shunt resistance (respectively, Rs = 8 W and Rsh = 5.8 kW) at room temperature. The dominant mechanisms of current transfer were established: tunneling-recombination mechanism in the voltage range from 0 to 0.3 V, and over-barrier emission and tunneling with inverse displacement in the voltage range from 0.3 to 0.45 V.

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