scholarly journals High-Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology; Annual Technical Progress Report, 6 March 1998--5 March 1999

10.2172/12162 ◽  
1999 ◽  
Author(s):  
S Guha
Keyword(s):  
Amorphous Silicon ◽  
Technical Progress ◽  
Triple Junction ◽  
High Efficiency ◽  
Progress Report ◽  
Silicon Alloy ◽  
Photovoltaic Technology

Material Issues in the Commercialization of Amorphous Silicon Alloy Thin-Film Photovoltaic Technology

1998 ◽  
Vol 507 ◽  
Author(s):  
S. Guha ◽  
J. Yang ◽  
A. Banerjee ◽  
S. Sugiyama
Keyword(s):  
Amorphous Silicon ◽  
Triple Junction ◽  
Alloy Thin Film ◽  
Critical Material ◽  
Silicon Alloy ◽  
Cell Efficiency ◽  
Spectral Splitting ◽  
Photovoltaic Technology ◽  
Annual Capacity ◽  
Junction Structure

ABSTRACTTwo significant developments took place in 1997 in the field of amorphous silicon alloy photovoltaic technology. First, a world record stable cell efficiency of 13% was demonstrated using a spectral-splitting, triple-junction structure. Second, a triple-junction photovoltaic manufacturing facility of an annual capacity of 5 MW was commissioned. In order to make the transition from R&D to production, critical material issues and deposition methods which ensure the lowest module cost per delivered watt needed to be evaluated. In this paper, we discuss some of these issues with special reference to the cell materials.

scholarly journals Research on stable, high efficiency amorphous silicon multijunction modules. Semiannual technical progress report, 1 May 1991--31 October 1991

1992 ◽  
Author(s):  
A. Catalano ◽  
R.R. Arya ◽  
M. Bennett ◽  
L. Chen ◽  
R. D`Aiello ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Technical Progress ◽  
High Efficiency ◽  
Progress Report

Improved Amorphous Silicon Alloy Solar Cells for Module Fabrication

1997 ◽  
Vol 467 ◽  
Author(s):  
A. Banerjee ◽  
J. Yang ◽  
S. Guha
Keyword(s):  
Amorphous Silicon ◽  
Triple Junction ◽  
Silicon Germanium ◽  
High Efficiency ◽  
Optical Loss ◽  
Relative Reduction ◽  
Large Area ◽  
Silicon Alloy ◽  
Module Design ◽  
The Status

ABSTRACTAn initial conversion efficiency of 13.5% has been obtained on a triple-junction triple-bandgap device fabricated in a large-area deposition reactor capable of producing one-square-foot modules. The intrinsic layer of the top cell is a wide bandgap amorphous silicon alloy. The middle and bottom cells employ high quality amorphous silicon-germanium alloy. The high efficiency of the triple-junction cell is attributed to the relative reduction of the optical loss in the top tunnel junction and the improvement in the quality of the middle and bottom component cells. Triple-junction devices with initial efficiency of 13.3% have shown saturation at 11.6% after light soaking. Modules of aperture area 909cm2 have been fabricated using an assembly process similar to the one being currently used in our manufacturing line. The module design consists of onelarge-area, high-current monolithic multijunction device. The status of the small-area devices andmodules is described

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