scholarly journals Evaluation of Characteristics of a Tantalum-Nitride Thin Film Resistor on an AlN Submount.

2002 ◽  
Vol 68 (8) ◽  
pp. 1052-1056 ◽  
Author(s):  
Teruhisa AKASHI ◽  
Hideaki TAKEMORI ◽  
Tetsuya TOMOBE ◽  
Toshiaki KOIZUMI
Keyword(s):  
Thin Film ◽  
Tantalum Nitride ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Tantalum Nitride Thin Film

scholarly journals Surface scattering mechanisms of tantalum nitride thin film resistor

2014 ◽  
Vol 9 (1) ◽  
Author(s):  
Huey-Ru Chen ◽  
Ying-Chung Chen ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Tantalum Nitride ◽  
Surface Scattering ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Scattering Mechanisms ◽  
Tantalum Nitride Thin Film

Radiofrequency characteristics of ionized sputtered tantalum nitride thin-film resistor in CMOS device

2017 ◽  
Vol 13 (3) ◽  
pp. 230-234 ◽  
Author(s):  
Woo Suk Sul ◽  
Soon Hyeong Kwon ◽  
Eunmi Choi ◽  
Yinhua Cui ◽  
Kang Won Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Tantalum Nitride ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Tantalum Nitride Thin Film

Integration of Ta–N Thin Film Resistors on Anodic Alumina MCM-D Substrate

2009 ◽  
Vol 131 (1) ◽  
Author(s):  
Dapeng Zhu ◽  
Xiaoqin Lin ◽  
Le Luo
Keyword(s):  
Thin Film ◽  
Film Surface ◽  
Bottom Layer ◽  
Anodic Alumina ◽  
Tantalum Nitride ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Anodization Process ◽  
Thin Film Resistors ◽  
Aluminum Anodization

The aim of this work is to evaluate the changes in microstructures and electrical properties of a tantalum nitride (Ta–N) thin film integrated on an aluminum anodization multichip module deposited (MCM-D) substrate. A Ta–N resistor with a thickness of 100 nm was integrated at the bottom layer of the MCM-D substrate using rf reactive sputtering. Effects of aluminum anodization process on the Ta–N thin film resistor were studied. The results show that the oxide bulges composed of Ta2O5 and Ta–O–N are formed at the Ta–N film surface due to the effect of the upper layer of porous anodic alumina. The resistivity and the temperature coefficient of resistance of the Ta–N resistor remain unchanged. The integrated resistor is more stable owing to the protection of the oxide bulges.

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