scholarly journals Conductance of Single- and Double-Gated Quantum Stub Transistor

2004 ◽  
Vol 1 (2) ◽  
pp. 36-40
Author(s):  
Alexandre B. Guerra ◽  
Edval J. P. Santos
Keyword(s):  
Low Power ◽  
Quantum Computation ◽  
High Frequency ◽  
Nearest Neighbor ◽  
Electronic Devices ◽  
Tight Binding ◽  
Electrical Behavior ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport

Quantum stub transistors are low power, high frequency, and nanometer-size devices, and as such they are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized transport. In this paper, we present the simulation of the conductance of the quantum stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hamiltonian. The results suggest how the electrical behavior of the quantum stub transistor may be improved.

Hydrodynamics of spin-polarized transport and spin pendulum

2007 ◽  
Vol 105 (1) ◽  
pp. 185-189 ◽  
Author(s):  
R. N. Gurzhi ◽  
A. N. Kalinenko ◽  
A. I. Kopeliovich ◽  
P. V. Pyshkin ◽  
A. V. Yanovsky
Keyword(s):  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport

Spin-polarized transport in a δ-doped magnetic-barrier nanostructure

2014 ◽  
Vol 378 (43) ◽  
pp. 3189-3195 ◽  
Author(s):  
Shuai Li ◽  
Mao-Wang Lu ◽  
Ya-Qing Jiang ◽  
Sai-Yan Chen
Keyword(s):  
Magnetic Barrier ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport

Electrical Transport Properties of Carbon Nanotube Metal-Semiconductor Heterojunction

2016 ◽  
Vol 15 (05n06) ◽  
pp. 1660009 ◽  
Author(s):  
Keka Talukdar ◽  
Anil Shantappa
Keyword(s):  
Electrical Transport ◽  
Nearest Neighbor ◽  
Electronic Devices ◽  
Tight Binding ◽  
Transmission Function ◽  
Topological Defects ◽  
Dynamics Simulation ◽  
Internal Stresses ◽  
Electrical Transport Properties ◽  
Tight Binding Approximation

Carbon nanotubes (CNTs) have been proved to have promising applicability in various fields of science and technology. Their fascinating mechanical, electrical, thermal, optical properties have caught the attention of today’s world. We have discussed here the great possibility of using CNTs in electronic devices. CNTs can be both metallic and semiconducting depending on their chirality. When two CNTs of different chirality are joined together via topological defects, they may acquire rectifying diode property. We have joined two tubes of different chiralities through circumferential Stone–Wales defects and calculated their density of states by nearest neighbor tight binding approximation. Transmission function is also calculated to analyze whether the junctions can be used as electronic devices. Different heterojunctions are modeled and analyzed in this study. Internal stresses in the heterojunctions are also calculated by molecular dynamics simulation.

Sign in / Sign up

Export Citation Format

Share Document