scholarly journals Twin Gas Jet-assisted Pulsed Green Laser Scribing of Sapphire Substrate

2016 ◽  
Vol 11 (2) ◽  
pp. 170-178
Author(s):  
X.Z. Xie
2016 ◽  
Vol 858 ◽  
pp. 1198-1201
Author(s):  
Alexander Usikov ◽  
Sergey Kurin ◽  
Iosif Barash ◽  
Alexander D. Roenkov ◽  
Andrei Antipov ◽  
...  

Hydride Vapor Phase Epitaxy (HVPE) was used to grow 1-4 μm thick undoped GaN layers on 4H-SiC and sapphire substrates. To adjust mechanical strain and crack formation in the GaN/SiC samples, the AlGaN-based buffer layer was grown at low temperature (920-980°C) and the GaN layer was grown at a higher temperature (1000-1040°C). Laser scribing through the GaN layer or the SiC substrate was applied to fabricate dies from the GaN/SiC and GaN/sapphire samples. The laser irradiation passing through the GaN layer to the sapphire substrate or through the SiC substrate to the GaN layer, along two orthogonal directions created a net of micro-cavities in sapphire and melted grooves in SiC that promote easy breakage of the sample into rectangular dies.


2013 ◽  
Vol 40 (12) ◽  
pp. 1203010
Author(s):  
谢小柱 Xie Xiaozhu ◽  
黄显东 Huang Xiandong ◽  
陈蔚芳 Chen Weifang ◽  
魏昕 Wei Xin ◽  
胡伟 Hu Wei ◽  
...  

2013 ◽  
Vol 1493 ◽  
pp. 207-212
Author(s):  
Ryousuke Ishikawa ◽  
Hidetoshi Wada ◽  
Yasuyoshi Kurokawa ◽  
Porponth Sichanugrist ◽  
Makoto Konagai

ABSTRACTThin-film silicon solar cells have been attracted a lot of intention as low-cost solar cells. One of the most important technologies for improving their performances is light trapping. We have demonstrated the high potential of double-textured zinc oxide (ZnO) thin films used as front transparent conductive oxide (TCO) films due to further enhancement of their light-trapping effects. Although the laser scribing method has already been well established for low-cost thin-film silicon solar cell module manufacturing, laser scribing technique on double-textured ZnO is new and still a challenging issue. In this study, we firstly demonstrated the availability of laser scribing for amorphous silicon (a-Si) solar cells fabricated on double-textured ZnO substrates. It is general to utilize lasers with wavelength of 1.06 μm and 532 nm for scribing of TCO and silicon layer, respectively. Here we attempted to scribe both of TCO and silicon layers using a 532 nm wavelength laser (green laser) for process simplifying.


1997 ◽  
Vol 24 (1-3) ◽  
pp. 180-188
Author(s):  
Shao Yiming ◽  
Zhen Huang ◽  
Siichi Shiga ◽  
Hisao Nakamura ◽  
Takao Karasawa
Keyword(s):  
Gas Jet ◽  

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