scholarly journals Frontiers in Optics Washington Sept 2019 GO Paper JTu3A.92

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Conversion Efficiency ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Optical Nonlinearities

Enhanced Kerr optical nonlinearities of waveguides integrated with layered graphene oxide (GO) films is experimentally demonstrated. Up to ~9.5-dB enhancement of four-wave mixing conversion efficiency is achieved for a waveguide with 2 layers of GO.

scholarly journals Strongly enhanced four wave mixing in micro-ring resonators integrated with 2D graphene oxide films

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Conversion Efficiency ◽  
Oxide Films ◽  
Four Wave Mixing ◽  
Ring Resonators ◽  
Wave Mixing ◽  
Two Dimensional

<a>Two-dimensional </a>layered graphene oxide films are integrated with micro-ring resonators to experimentally demonstrate enhanced four-wave mixing, achieving up to ~7.6-dB enhancement in conversion efficiency for a uniformly coated device and ~10.3-dB for a patterned device.

scholarly journals Enhancing the Kerr nonlinearity in SiN nanowires with graphene oxide films

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Silicon Nitride ◽  
Conversion Efficiency ◽  
Oxide Films ◽  
Kerr Nonlinearity ◽  
Four Wave Mixing ◽  
High Conversion ◽  
Wave Mixing ◽  
Efficiency Improvement ◽  
High Conversion Efficiency

Enhanced four-wave mixing in silicon nitride waveguides integrated with 2D graphene oxide (GO) films is experimentally demonstrated. We achieve a high conversion efficiency improvement of ~7.3 dB for a 2-cm-long waveguide with monolayer GO film.

scholarly journals Strongly enhanced four wave mixing in micro-ring resonators integrated with 2D graphene oxide films

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Conversion Efficiency ◽  
Oxide Films ◽  
Four Wave Mixing ◽  
Ring Resonators ◽  
Wave Mixing ◽  
Two Dimensional

<a>Two-dimensional </a>layered graphene oxide films are integrated with micro-ring resonators to experimentally demonstrate enhanced four-wave mixing, achieving up to ~7.6-dB enhancement in conversion efficiency for a uniformly coated device and ~10.3-dB for a patterned device.

scholarly journals Four-wave mixing in integrated ring resonators integrated with 2D graphene oxide

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Conversion Efficiency ◽  
Oxide Films ◽  
Four Wave Mixing ◽  
Ring Resonators ◽  
Wave Mixing

We experimentally demonstrate enhanced four-wave mixing in micro-ring resonators (MRRs) integrated with graphene oxide films. We achieve up to ~7.6-dB enhancement in conversion efficiency for a uniformly coated MRR and ~10.3-dB for a patterned device.

scholarly journals IEEE CLEO PacRim conf Paper 11E5 FWM MRR GO OSF

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Conversion Efficiency ◽  
Oxide Films ◽  
Four Wave Mixing ◽  
Ring Resonators ◽  
Wave Mixing ◽  
Two Dimensional

Two-dimensional layered graphene oxide films are integrated with micro-ring resonators to experimentally demonstrate enhanced four-wave mixing, achieving up to ~7.6-dB enhancement in conversion efficiency for a uniformly coated device and ~10.3-dB for a patterned device.

scholarly journals Conference for Lasers and ElectroOptics (CLEO) USA May 2020 Paper SM4L.5 FWM in MRR with GO

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Conversion Efficiency ◽  
Oxide Films ◽  
Four Wave Mixing ◽  
Ring Resonators ◽  
Wave Mixing

We experimentally demonstrate enhanced four-wave mixing in micro-ring resonators (MRRs) integrated with graphene oxide films. We achieve up to ~7.6-dB enhancement in conversion efficiency for a uniformly coated MRR and ~10.3-dB for a patterned device.

scholarly journals Enhancing the Kerr nonlinearity in SiN nanowires with graphene oxide films

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Silicon Nitride ◽  
Conversion Efficiency ◽  
Oxide Films ◽  
Kerr Nonlinearity ◽  
Four Wave Mixing ◽  
High Conversion ◽  
Wave Mixing ◽  
Efficiency Improvement ◽  
High Conversion Efficiency

Enhanced four-wave mixing in silicon nitride waveguides integrated with 2D graphene oxide (GO) films is experimentally demonstrated. We achieve a high conversion efficiency improvement of ~7.3 dB for a 2-cm-long waveguide with monolayer GO film.

scholarly journals Four-wave mixing in integrated ring resonators integrated with 2D graphene oxide

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Conversion Efficiency ◽  
Oxide Films ◽  
Four Wave Mixing ◽  
Ring Resonators ◽  
Wave Mixing

We experimentally demonstrate enhanced four-wave mixing in micro-ring resonators (MRRs) integrated with graphene oxide films. We achieve up to ~7.6-dB enhancement in conversion efficiency for a uniformly coated MRR and ~10.3-dB for a patterned device.

scholarly journals CLEO Pacific Rim 2020 Enhanced FWM in SiN nanowires integrated with 2D GO films

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Silicon Nitride ◽  
Conversion Efficiency ◽  
Four Wave Mixing ◽  
Pacific Rim ◽  
High Conversion ◽  
Wave Mixing ◽  
Efficiency Improvement ◽  
High Conversion Efficiency

Enhanced four-wave mixing in silicon nitride waveguides integrated with 2D graphene oxide (GO) films is experimentally demonstrated. We achieve a high conversion efficiency improvement of ~7.3 dB for a 2-cm-long waveguide with monolayer GO film.

scholarly journals Highly efficient THz four-wave mixing in doped silicon

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Nils Dessmann ◽  
Nguyen H. Le ◽  
Viktoria Eless ◽  
Steven Chick ◽  
Kamyar Saeedi ◽  
...  
Keyword(s):  
Four Wave Mixing ◽  
Wave Mixing ◽  
Optical Nonlinearities ◽  
Third Order ◽  
Picosecond Pulses ◽  
Light Pulses ◽  
A Value ◽  
Doped Silicon ◽  
Perturbative Regime ◽  
Silicon Doped

AbstractThird-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.

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