Justification of the possibility and assessment of the efficiency of underbalanced wells drilling technology application with regulated pressure

Author(s):  
M.V. Dvoynikov ◽  
◽  
N.Yu. Kuznetsova ◽  
Ya.D. Minaev ◽  
◽  
...  
Author(s):  
R.F. Sagatov ◽  
◽  
A.Ya. Vakula ◽  
A.R. Ibragimov ◽  
L.B. Khuzina ◽  
...  

2012 ◽  
Author(s):  
Jude Chima ◽  
Shaohua Zhou ◽  
Ali Al-Hajji ◽  
Mike Okot ◽  
Qamar J. Sharif ◽  
...  

2020 ◽  
Author(s):  
K.V. Pushnikov ◽  
A.I. Trusov ◽  
R.R. Safin ◽  
D.S. Leontyev ◽  
A.N. Mingazov ◽  
...  

2014 ◽  
Vol 513-517 ◽  
pp. 2607-2611
Author(s):  
Gao Qun Hu ◽  
Rui Fu ◽  
Guang Hui Qin

In order to develop marginal oil reservoir and save drilling cost,since 2006 Shengli Oilfield began to do research of slim hole drilling technology. After a summary trial of 13 wells in Shengtuo area, Analysis the existence of technical difficulties and solutions of slimhole. Preliminary formed a set of suitable technology for Shengli oil field, especially the slim hole drilling in Shengtuo area, The average penetration rate reached 18.39m/h, The average drilling period is 10.69d. The experience provides reference to the same kind of wells in shengli oilfield.


2018 ◽  
Vol 10 (2) ◽  
pp. 236-248 ◽  
Author(s):  
Thomas Reinsch ◽  
Bob Paap ◽  
Simon Hahn ◽  
Volker Wittig ◽  
Sidney van den Berg

Author(s):  
T. C. Tisone ◽  
S. Lau

In a study of the properties of a Ta-Au metallization system for thin film technology application, the interdiffusion between Ta(bcc)-Au, βTa-Au and Ta2M-Au films was studied. Considered here is a discussion of the use of the transmission electron microscope(TEM) in the identification of phases formed and characterization of the film microstructures before and after annealing.The films were deposited by sputtering onto silicon wafers with 5000 Å of thermally grown oxide. The film thicknesses were 2000 Å of Ta and 2000 Å of Au. Samples for TEM observation were prepared by ultrasonically cutting 3mm disks from the wafers. The disks were first chemically etched from the silicon side using a HNO3 :HF(19:5) solution followed by ion milling to perforation of the Au side.


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