High-speed and efficient silicon modulator based on forward-biased pin diodes

Active metamaterials usage is one of the most promising ways to control the characteristics of antennas, waveguides, and other microwave devices. This article proposes the controlled metamaterial design in the form of an electromagnetic crystal with switches located at the nodes of the crystal lattice. This metamaterial application for changing the fundamental mode phase of the WR-137 waveguide is investigated. Controlling the characteristics of the metamaterial is performed by switching pin diodes at the nodes of the lattice, so this control method allows you to achieve a high speed system, as well as to switch only certain pin diodes. Electrodynamic modeling was carried out, on the basis of which the characteristics of the waveguide were obtained for different metamaterial closed nodes combination, which changes the the electromagnetic wave phase.

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High-Speed Plasmonic-Conductive Oxide-Silicon Modulator by Epsilon-Near-Zero Electro-Absorption

2019 IEEE 16th International Conference on Group IV Photonics (GFP) ◽

10.1109/group4.2019.8925653 ◽

2019 ◽

Cited By ~ 1

Author(s):

Bokun Zhou ◽

Erwen Li ◽

Yunfei Bo ◽

Alan X. Wang

Keyword(s):

High Speed ◽

Conductive Oxide ◽

Silicon Modulator ◽

Epsilon Near Zero

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High-speed Silicon Modulator for Future VLSI Interconnect

Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light ◽

10.1364/ipnra.2007.imd3 ◽

2007 ◽

Cited By ~ 7

Author(s):

Ansheng Liu ◽

Ling Liao ◽

Doron Rubin ◽

Juthika Basak ◽

Hat Nguyen ◽

...

Keyword(s):

High Speed ◽

Silicon Modulator

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Investigation of the Internal Carrier Distribution in 4H-SiC Pin-Diodes by Laser Absorption Experiments

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.493 ◽

2008 ◽

Vol 600-603 ◽

pp. 493-496 ◽

Cited By ~ 2

Author(s):

Dorothea Werber ◽

Martin Aigner ◽

D. Denoth ◽

F. Wittmann ◽

Gerhard Wachutka

Keyword(s):

Charge Carrier ◽

High Speed ◽

Hole Concentration ◽

Broad Band ◽

Low Noise ◽

Blue Laser ◽

Charge Carrier Density ◽

Carrier Distribution ◽

Pin Diodes ◽

Laser Absorption

We present an experimental equipment for studying the charge carrier distribution in the interior of bipolar 4H-SiC high power devices by means of laser absorption measurements. Since the light absorption coefficient in a semiconductor depends on the electron and hole concentration, the attenuation of a laser beam transmitted through a sample is an integral function of the local charge carrier density. In order to detect the tiny changes in the light intensity caused by the plasma-optical effect, a highly sensitive measurement set-up has been developed. Its crucial components are a low-noise blue laser and a high-speed and broad-band photo-diode amplifier circuit. Sample preparation is sophisticated and requires special care. We investigated charge carrier profiles in 4H-SiC pin-diodes in the high-injection regime at current densities between 175 A/cm² and 350 A/cm². The measured charge carrier profiles are in good agreement with computer simulations.

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