Research Advancement on Ultrafast Laser Microprocessing of Transparent Dielectrics

2021 ◽  
Vol 48 (2) ◽  
pp. 0202019
Author(s):  
李佳群 Li Jiaqun ◽  
闫剑锋 Yan Jianfeng ◽  
李欣 Li Xin ◽  
曲良体 Qu Liangti
Nanophotonics ◽  
2015 ◽  
Vol 4 (3) ◽  
pp. 332-352 ◽  
Author(s):  
S. Gross ◽  
M. J. Withford

AbstractSince the discovery that tightly focused femtosecond laser pulses can induce a highly localised and permanent refractive index modification in a large number of transparent dielectrics, the technique of ultrafast laser inscription has received great attention from a wide range of applications. In particular, the capability to create three-dimensional optical waveguide circuits has opened up new opportunities for integrated photonics that would not have been possible with traditional planar fabrication techniques because it enables full access to the many degrees of freedom in a photon. This paper reviews the basic techniques and technological challenges of 3D integrated photonics fabricated using ultrafast laser inscription as well as reviews the most recent progress in the fields of astrophotonics, optical communication, quantum photonics, emulation of quantum systems, optofluidics and sensing.


CLEO: 2015 ◽  
2015 ◽  
Author(s):  
Yi Liu ◽  
Yohann Brelet ◽  
Zhanbing He ◽  
Linwei Yu ◽  
Yue Zhong ◽  
...  

2021 ◽  
Vol 33 (1) ◽  
pp. 012009
Author(s):  
Aiko Narazaki ◽  
Hideyuki Takada ◽  
Dai Yoshitomi ◽  
Kenji Torizuka ◽  
Yohei Kobayashi

2020 ◽  
Vol 13 (6) ◽  
pp. 1-15
Author(s):  
ZHANG Guo-dong ◽  
◽  
CHENG Guang-hua ◽  
ZHANG Wei ◽  
Keyword(s):  

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


2021 ◽  
Vol 118 (19) ◽  
pp. 192403
Author(s):  
Kathinka Gerlinger ◽  
Bastian Pfau ◽  
Felix Büttner ◽  
Michael Schneider ◽  
Lisa-Marie Kern ◽  
...  
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document