Effect of V-pit Size on Optical and Electrical Properties of InGaN/AlGaN Near-ultraviolet Light Emitting Diode

2017 ◽  
Vol 38 (6) ◽  
pp. 735-741
Author(s):  
聂晓辉 NIE Xiao-hui ◽  
王小兰 WANG Xiao-lan ◽  
莫春兰 MO Chun-lan ◽  
张建立 ZHANG Jian-li ◽  
潘 拴 PAN Shuan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Optical And Electrical Properties ◽  
Light Emitting ◽  
Near Ultraviolet

scholarly journals AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode

2008 ◽  
Vol 45 (4) ◽  
pp. 25-32 ◽  
Author(s):  
L. Dimitrocenko ◽  
J. Grube ◽  
P. Kulis ◽  
G. Marcins ◽  
B. Polyakov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Electron Tunneling ◽  
Light Emitting Diode ◽  
Vapour Phase ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Near Ultraviolet ◽  
Metal Organic ◽  
Organic Vapour

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting DiodeA 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, ann-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier.

Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si

2018 ◽  
Vol 12 (04) ◽  
pp. 1 ◽  
Author(s):  
Zengcheng Li ◽  
Legong Liu ◽  
Yingnan Huang ◽  
Meixin Feng ◽  
Jianxun Liu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Carbon Incorporation ◽  
Light Emitting ◽  
Near Ultraviolet

Dependence of Yellow Phosphor on Optical and Electrical Properties of the White Light Emitting Diode Chip

2006 ◽  
Vol 510-511 ◽  
pp. 106-109 ◽  
Author(s):  
Chang Sik Son ◽  
Ho Jung Chang ◽  
Kang Hyun Jaekal ◽  
Young Chol Chang ◽  
Soo Wohn Lee
Keyword(s):  
Electrical Properties ◽  
Bias Voltage ◽  
White Light ◽  
Light Emitting Diode ◽  
White Led ◽  
Optical And Electrical Properties ◽  
Maximum Luminance ◽  
Mixing Conditions ◽  
Light Emitting ◽  
Yellow Phosphor

We prepared the surface mounted white light emitting diode (LED) chips by using yellow phosphors on the blue LED chip. The optical and electrical properties of prepared white LED chips were investigated. The yellow phosphor mixed with transparent epoxy was coated on the prepared LED chip. The optimum mixing conditions with epoxy and yellow phosphor is obtained at the mixing ration of epoxy: yellow phosphor = 97 : 3 wt %. The maximum luminance and light emitting efficiency are above 80,000 cd/m2 and 23.2 lm/W, respectively, at the bias voltage of 2.9 V. There was no distinct change in the luminance strength with changing of the yellow phosphor ratios. The flowing current of the white LED chip is about 30 mA at 2.9 V.

scholarly journals Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with Al-based omnidirectional reflector having NiZn∕Ag microcontacts

2006 ◽  
Vol 89 (14) ◽  
pp. 141123 ◽  
Author(s):  
Jong Kyu Kim ◽  
J.-Q. Xi ◽  
Hong Luo ◽  
E. Fred Schubert ◽  
Jaehee Cho ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Emitting ◽  
Near Ultraviolet

Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

2003 ◽  
Vol 83 (23) ◽  
pp. 4713-4715 ◽  
Author(s):  
Qing-Xuan Yu ◽  
Bo Xu ◽  
Qi-Hong Wu ◽  
Yuan Liao ◽  
Guan-Zhong Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Gan Heterostructure
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