Hygrothermal simulation and risk evaluation - The impact of discretization on numerical results and performance

Regulations for modelling when deducting thermal simulations are represented in the standards [1]. However, the level of model detail regarding discretization in hygrothermal simulations and especially for evaluating the mould risk on surfaces of organic vapour barriers is almost never discussed. The presented approach shows that the chosen discretization of the simulation model is one of the most influencing factors for the risk analysis of surfaces of very fine layers, such as paper vapour barriers, in walls with interior insulation via hygrothermal simulations. To reduce the computational performance issues caused by very fine finite volume meshes [2], the hygrothermal properties of the connecting surfaces of the finite volumes can be calculated instead. For the risk analysis the VTT-Model was implemented in the hygrothermal simulation program HAM4D_VIE, followed by a comparison of the effect of discretization on the results of the surfaces of the vapour barrier. The results of the comparison are discussed with regard to numerical results and their qualitative impact on computational performance. The presented numerical model will be proposed as an alternative for risk analysis on surfaces of vapour barriers, where mould growth would either stay undetected or the necessary discretization with elements comes at the cost of computational performance.

Nanocone structures with limited interspace grown by MOVPE

Reduction and limitation of free spaces between the gallium phosphide nanocones was studied. A set of nanocone samples was grown by metal organic vapour phase epitaxy (MOVPE) in the temperature range between 610 and 690°C. Our results showed that by an appropriate combination of a high density of gold seeds and an optimized growth temperature it was possible to obtain a nanostructured surface with very limited free spaces between the nanocones. A combination of lateral and vertical growth rates regulated by the selection of growth temperature played a very important role in the nanocone hexagonal base enlargement, which helped to minimize spaces between the cones. The limitation of free space between the nanocones increased a probability of edge creation that is very helpful for the successful growth of 2D materials.

The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.

MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications

ABSTRACTMost publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed.