Preparation and Electrical Property of Mg2Si Thin Film by Pulsed Laser Deposition

2014 ◽  
Vol 1058 ◽  
pp. 244-247 ◽  
Author(s):  
Mei Jun Yang
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Temperature Range ◽  
Type Semiconductor ◽  
Annealing Procedure ◽  
Si Thin Film

Mg2Si thin film on Si(100) substrate was obtained by pulsed laser deposition. Effects of the annealing procedure on the growth of Mg2Si film were discussed. X-ray, atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) were applied for the phase and microstructure of the obtained Mg2Si film. The results revealed that the annealing procedure was very important for the crystallization of Mg2Si thin film. The Ar partial pressure of 10Pa, temperature of 500°C and time of 30min for annealing were the optimal annealing parameters for Mg2Si thin film formation. Furthermore, electrical properties of the obtained Mg2Si thin film were detected. The results showed that the maximal resistivity of Mg2Si thin film was 7Ω·cm within the temperature range of 110~230°C. And the resistivity gradually decreased with the increase of temperature, which was the characteristic behaviour of a semiconductor. Carrier concentration of the film was negative in the temperature range of testing, showing Mg2Si thin film as n-type semiconductor.

PbS Thin Film Formation on Terrace-Step Surface by Pulsed Laser Deposition

1998 ◽  
Vol 33 (5) ◽  
pp. 711-716 ◽  
Author(s):  
J Vaitkus ◽  
V Kazlauskiene ◽  
J Miskinis ◽  
J Sinius
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thin Film Formation

Nanoparticles and Thin Film Formation in Ultrashort Pulsed Laser Deposition of Vanadium Oxide†

2009 ◽  
Vol 113 (52) ◽  
pp. 14969-14974 ◽  
Author(s):  
Roberto Teghil ◽  
Luciano D’Alessio ◽  
Angela De Bonis ◽  
Agostino Galasso ◽  
Neluta Ibris ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thin Film Formation ◽  
Ultrashort Pulsed Laser

Atomic Force Microscopy Study of Hard Coating Films Prepared by Pulsed Laser Deposition Method

1996 ◽  
Vol 441 ◽  
Author(s):  
Hsieh-Li Chan ◽  
Ashok Kumar ◽  
L. Sanderson ◽  
J. J. Weimer
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Temperatures

AbstractAluminum nitride (AIN), silicon nitride (Si3N4), and silicon carbide (SIC) thin films have been snthesized using pulsed laser deposition (PLD) techniques. AIN and Si3N4 films were deposited on Si (100) substrates at different temperatures (room temperature to 600°C) and partial pressures (15 mTorr N2 to 200 mTorr N2). SiC films were deposited on Si (100) substrates at different temperatures (room temperature to 400°C) in high vacuum. The atomic force microscopy (AFM) is a useful tool for studying the surface topography of these technologically interesting thin film surfaces. This paper discusses in detail AFM analysis of thin film coatings.

Sign in / Sign up

Export Citation Format

Share Document