Metastable Phase Formation in Fe-Al Thin Films Cocondensed by Cross-Beam Pulsed Laser Deposition

2000 ◽  
Vol 343-346 ◽  
pp. 249-254 ◽  
Author(s):  
H. Geisler ◽  
A. Mensch ◽  
A. Tselev ◽  
A.I. Gorbunov ◽  
H. Worch
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Phase Formation ◽  
Metastable Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Metastable Phase Formation

Elimination of impurity phase formation in FePt magnetic thin films prepared by pulsed laser deposition

2014 ◽  
Vol 288 ◽  
pp. 381-391 ◽  
Author(s):  
Ying Wang ◽  
Rohit Medwal ◽  
Neeru Sehdev ◽  
Boluo Yadian ◽  
T.L. Tan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Phase Formation ◽  
Pulsed Laser ◽  
Magnetic Thin Films ◽  
Impurity Phase ◽  
Laser Deposition

scholarly journals Magnesium Doping for the Promotion of Rutile Phase Formation in the Pulsed Laser Deposition of TiO2 Thin Films

2018 ◽  
Vol 59 (1) ◽  
pp. 33-38 ◽  
Author(s):  
Akihiro Ishii ◽  
Itaru Oikawa ◽  
Masaaki Imura ◽  
Toshimasa Kanai ◽  
Hitoshi Takamura
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Phase Formation ◽  
Pulsed Laser ◽  
Rutile Phase ◽  
Laser Deposition ◽  
Magnesium Doping

scholarly journals Phase formation of manganese oxide thin films using pulsed laser deposition

2021 ◽  
Author(s):  
Lauren M. Garten ◽  
Praneetha Selvarasu ◽  
John Perkins ◽  
David Ginley ◽  
Andriy Zakutayev
Keyword(s):  
Thin Films ◽  
Manganese Oxide ◽  
Pulsed Laser Deposition ◽  
Phase Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Bulk Materials ◽  
Equilibrium Phases

The manganese oxide thin films deposited by PLD in this work vary significantly from the expected equilibrium phases of the bulk materials or nanoparticles.

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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