Composition Dependent Resonant Raman Scattering in Al0.33Ga0.67As/InxGa1-xAs1-yNy Multiquantum Wells

2006 ◽  
Vol 518 ◽  
pp. 17-22 ◽  
Author(s):  
S. Lazić ◽  
J.M. Calleja ◽  
R. Hey ◽  
K. Ploog
Keyword(s):  
Light Scattering ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Vibration Modes ◽  
Inelastic Light Scattering ◽  
Resonance Energies ◽  
Resonant Raman ◽  
Resonant Raman Scattering

InxGa1-xAs1-yNy/Al0.33Ga0.67As multiquantum wells grown by plasma-assisted molecular beam epitaxy are studied by resonant inelastic light scattering. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm-1. Their intensities resonate at the barrier bandgap reduced by the presence of N. Their resonance energies reveal the influence of the N concentration on the barrier gap at the multiquantum well interfaces. These peaks are interpreted in terms of local vibrations involving the pairing of N atoms, which seems to occur mostly at the quantum well interfaces due to preferential bonding of N to Al.

Photoreflectance and Resonant Raman Scattering in Short Period Si/Ge Superlattices on Ge (001) and Si (001)

1991 ◽  
Vol 220 ◽  
Author(s):  
U. Menczigar ◽  
K. Eberl ◽  
G. Abstreiter
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Electronic States ◽  
Optical Phonons ◽  
Short Period ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Etalon Effect

ABSTRACTShort period Si/Ge superlattices have been grown on Ge (001) and Si (001) substrates by molecular beam epitaxy. The optical properties of the superlattices have been studied with photoreflectance. (PR) and resonant Raman scattering (RRS). With PR we are able to observe new, structural induced transitions for all superlattices which are related to E0-and E1-like gaps. The analysis of PR spectra is complicated by an optical etalon effect if the samples are sufficently thick. The E1-like transitions in the range between 1.9eV and 2.7eV are also studied with RRS. Due to the confinement of the optical phonons in the Ge and Si layers RRS is able to probe the bandstructure in each layer seperately. Localized electronic states in the Ge layers can be observed with RRS for a Si4Ge18 superlattice and are compared with PR measurements.

Excitonic channel of two-phonon resonant Raman scattering in a quantum well

1994 ◽  
Vol 89 (10) ◽  
pp. 855-857
Author(s):  
L.I. Korovin ◽  
S.T. Pavlov ◽  
B.E. Eshpulatov
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Fano effect of resonant Raman scattering in a semiconductor quantum well

1994 ◽  
Vol 50 (12) ◽  
pp. 8584-8588 ◽  
Author(s):  
Kui-juan Jin ◽  
Shao-hua Pan ◽  
Guo-zhen Yang
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Fano Effect ◽  
Semiconductor Quantum Well ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Electronic confinement in a single GaAs quantum well probed by low-frequency resonant Raman scattering

1997 ◽  
Vol 56 (3) ◽  
pp. 1486-1490 ◽  
Author(s):  
A. Mlayah ◽  
A. Sayari ◽  
R. Grac ◽  
A. Zwick ◽  
R. Carles ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Low Frequency ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Large electric-field-induced enhancement of resonant Raman scattering of a single quantum well

1994 ◽  
Vol 15 (4) ◽  
pp. 377-380
Author(s):  
Z.C. Yan ◽  
E. Goovaerts ◽  
C. Van Hoof ◽  
J. Genoe ◽  
G. Borghst ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Raman Scattering ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Large Electric Field ◽  
Resonant Raman ◽  
Resonant Raman Scattering
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