Resonant Raman scattering in GaAs-AlGaAs and GaAs-AlAs multi-quantum well structures and its dependence on electric field

1986 ◽  
Vol 174 (1-3) ◽  
pp. 200-205 ◽  
Author(s):  
T. Furuta ◽  
H. Sakaki ◽  
J. Yoshino
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Well Structures ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Multi Quantum Well

Large electric-field-induced enhancement of resonant Raman scattering of a single quantum well

1994 ◽  
Vol 15 (4) ◽  
pp. 377-380
Author(s):  
Z.C. Yan ◽  
E. Goovaerts ◽  
C. Van Hoof ◽  
J. Genoe ◽  
G. Borghst ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Raman Scattering ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Large Electric Field ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures

2000 ◽  
Vol 364 (1-2) ◽  
pp. 156-160 ◽  
Author(s):  
J. Gleize ◽  
F. Demangeot ◽  
J. Frandon ◽  
M.A. Renucci ◽  
M. Kuball ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Well Structures ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Composition Dependent Resonant Raman Scattering in Al0.33Ga0.67As/InxGa1-xAs1-yNy Multiquantum Wells

2006 ◽  
Vol 518 ◽  
pp. 17-22 ◽  
Author(s):  
S. Lazić ◽  
J.M. Calleja ◽  
R. Hey ◽  
K. Ploog
Keyword(s):  
Light Scattering ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Vibration Modes ◽  
Inelastic Light Scattering ◽  
Resonance Energies ◽  
Resonant Raman ◽  
Resonant Raman Scattering

InxGa1-xAs1-yNy/Al0.33Ga0.67As multiquantum wells grown by plasma-assisted molecular beam epitaxy are studied by resonant inelastic light scattering. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm-1. Their intensities resonate at the barrier bandgap reduced by the presence of N. Their resonance energies reveal the influence of the N concentration on the barrier gap at the multiquantum well interfaces. These peaks are interpreted in terms of local vibrations involving the pairing of N atoms, which seems to occur mostly at the quantum well interfaces due to preferential bonding of N to Al.

Sign in / Sign up

Export Citation Format

Share Document