Process flow charts

2021 ◽  
pp. 319-332
Author(s):  
David N. Ammons ◽  
Dale J. Roenigk
Keyword(s):  
2017 ◽  
Vol 9 ◽  
pp. 102-108
Author(s):  
A.S. Belousov ◽  
◽  
O.N. Alekseev ◽  
Keyword(s):  

Author(s):  
Denis Dmitrievich Strelnikov

The process of transshipment of bulk cargo within the Eastern cargo terminal of the sea port of Novorossiysk has been considered. A method for calculating the performance of the crane group has been developed, taking into account the interaction of cordon and rear crane subgroups. The method is based on the practical process flow charts of Novorossiysk port for processing coal, cast iron and iron ore. There has been presented the designed method for calculating the coefficient of predicted performance of cargo handling for transshipping the bulk cargoes (e.g., coal, iron ore and cast iron) based on the data on performance of crane equipment, allocated resources (handling equipment and dock machine operator teams). The forecast performance ratio allows to determine whether the operation schedule is ahead or behind the standard of the process flow charts. The method of calculating the forecast time of transshipment of bulk cargoes has been offered, subject to the influence of meteorological factor on productivity of cargo operations. The formulas for calculating the estimated time of the cargo operations at all possible mutual locations on the time axis of the segments of the weather conditions and the time of the operation have been given.


Author(s):  
Fred Y. Chang ◽  
Victer Chan

Abstract This paper describes a novel de-process flow by combining cobalt silicide / nitride wet etch with KOH electrochemical wet etch (ECW) to identify leaky gate in silicided deep sub-micron process technology. Traditionally, leaky gate identification requires direct confirmation by gate level electrical or emission detection technique. Ohtani [1] used KOH electrochemical etch application to identify nonsilicided leaky gate capacitor in DRAM without using the above confirmation. The result of the case study demonstrates the expanded application of ECW etch to both silicided 0.18um logic and SRAM devices. Voltage contrast at metal 1 to assist leaky gate localization is also proposed. By combining both techniques, the possibility for isolating gate related defects are greatly enhanced. Case studies also show the advantages of the proposed technique over conventional poly level voltage contrast in leaky gate identification especially with devices that use local interconnect and nitride liner process.


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