High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer

2017 ◽  
Vol 11 (1) ◽  
pp. 012101 ◽  
Author(s):  
Yukio Kashima ◽  
Noritoshi Maeda ◽  
Eriko Matsuura ◽  
Masafumi Jo ◽  
Takeshi Iwai ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Contact Layer ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

2012 ◽  
Vol 5 (8) ◽  
pp. 082101 ◽  
Author(s):  
Max Shatalov ◽  
Wenhong Sun ◽  
Alex Lunev ◽  
Xuhong Hu ◽  
Alex Dobrinsky ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes
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