Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

physica status solidi (a) ◽

10.1002/pssa.201800815 ◽

2019 ◽

Vol 216 (4) ◽

pp. 1800815 ◽

Author(s):

Chunshuang Chu ◽

Kangkai Tian ◽

Yonghui Zhang ◽

Wengang Bi ◽

Zi-Hui Zhang

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

External Quantum Efficiency ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

Applied Physics Express ◽

10.7567/apex.10.031002 ◽

2017 ◽

Vol 10 (3) ◽

pp. 031002 ◽

Author(s):

Takayoshi Takano ◽

Takuya Mino ◽

Jun Sakai ◽

Norimichi Noguchi ◽

Kenji Tsubaki ◽

...

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

External Quantum Efficiency ◽

Light Emitting Diodes ◽

Extraction Efficiency ◽

Light Extraction ◽

Light Extraction Efficiency ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

Applied Physics Express ◽

10.1143/apex.5.082101 ◽

2012 ◽

Vol 5 (8) ◽

pp. 082101 ◽

Author(s):

Max Shatalov ◽

Wenhong Sun ◽

Alex Lunev ◽

Xuhong Hu ◽

Alex Dobrinsky ◽

...

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

External Quantum Efficiency ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer

Applied Physics Express ◽

10.7567/apex.11.012101 ◽

2017 ◽

Vol 11 (1) ◽

pp. 012101 ◽

Author(s):

Yukio Kashima ◽

Noritoshi Maeda ◽

Eriko Matsuura ◽

Masafumi Jo ◽

Takeshi Iwai ◽

...

Keyword(s):

Photonic Crystal ◽

Ultraviolet Light ◽

Quantum Efficiency ◽

External Quantum Efficiency ◽

Light Emitting Diodes ◽

Contact Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

Journal of Applied Physics ◽

10.1063/1.4939504 ◽

2016 ◽

Vol 119 (2) ◽

pp. 023101 ◽

Author(s):

Jun Hyuk Park ◽

Jong Won Lee ◽

Dong Yeong Kim ◽

Jaehee Cho ◽

E. Fred Schubert ◽

...

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Current Density ◽

External Quantum Efficiency ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Optik ◽

10.1016/j.ijleo.2021.166528 ◽

2021 ◽

Vol 232 ◽

pp. 166528

Author(s):

Muhammad Usman ◽

Tariq Jamil ◽

Shahzeb Malik ◽

Habibullah Jamal

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Enhancement in external quantum efficiency of 365 nm vertical-type ultraviolet light-emitting diodes with embedded oxide structure

10.1117/12.2003753 ◽

2013 ◽

Author(s):

Kun-Ching Shen ◽

Min-Hao Yang ◽

Wen-Yu Lin ◽

Ray-Hua Horng ◽

Dong-Sing Wuu

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

External Quantum Efficiency ◽

Light Emitting Diodes ◽

Light Emitting ◽

Oxide Structure ◽

Ultraviolet Light Emitting Diodes

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Publisher's Note: “AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy” [Appl. Phys. Lett. 98, 081110 (2011)]

Applied Physics Letters ◽

10.1063/1.3675971 ◽

2012 ◽

Vol 100 (2) ◽

pp. 029901

Author(s):

Yitao Liao ◽

Christos Thomidis ◽

Chen-kai Kao ◽

Theodore D. Moustakas

Keyword(s):

Molecular Beam Epitaxy ◽

Ultraviolet Light ◽

Quantum Efficiency ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0111704jss ◽

2017 ◽

Vol 6 (4) ◽

pp. Q42-Q52 ◽

Author(s):

Jae-Seong Park ◽

Jong Kyu Kim ◽

Jaehee Cho ◽

Tae-Yeon Seong

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

External Quantum Efficiency ◽

Light Emitting Diodes ◽

Light Emitting ◽

Review Group ◽

Group Iii ◽

Group Iii Nitride ◽

Ultraviolet Light Emitting Diodes

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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2014.02.039 ◽

2014 ◽

Vol 395 ◽

pp. 9-13 ◽

Author(s):

Peng Dong ◽

Jianchang Yan ◽

Yun Zhang ◽

Junxi Wang ◽

Jianping Zeng ◽

...

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Light Emitting ◽

Sapphire Substrates ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes ◽

Patterned Sapphire Substrates

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AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.3559842 ◽

2011 ◽

Vol 98 (8) ◽

pp. 081110 ◽

Author(s):

Yitao Liao ◽

Christos Thomidis ◽

Chen-kai Kao ◽

Theodore D. Moustakas

Keyword(s):

Molecular Beam Epitaxy ◽

Ultraviolet Light ◽

Quantum Efficiency ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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