Polarization-controlled and single-transverse-mode vertical-cavity surface-emitting lasers with eye-shaped oxide aperture

2018 ◽  
Vol 57 (12) ◽  
pp. 120309
Author(s):  
Jiye Zhang ◽  
Jianwei Zhang ◽  
Xing Zhang ◽  
Yongqiang Ning ◽  
Hongbo Zhu ◽  
...  
2021 ◽  
Vol 58 (7) ◽  
pp. 0700008
Author(s):  
王翔媛 Wang Xiangyuan ◽  
崔碧峰 Cui Bifeng ◽  
李彩芳 Li Caifang ◽  
许建荣 Xu Jianrong ◽  
王豪杰 Wang Haojie

1990 ◽  
Vol 57 (3) ◽  
pp. 218-220 ◽  
Author(s):  
C. J. Chang‐Hasnain ◽  
M. Orenstein ◽  
A. Von Lehmen ◽  
L. T. Florez ◽  
J. P. Harbison ◽  
...  

1994 ◽  
Vol 05 (04) ◽  
pp. 667-730 ◽  
Author(s):  
MAREK OSIŃSKI ◽  
WŁODZIMIERZ NAKWASKI

A comprehensive review of temperature-related effects and thermal modeling of vertical-cavity surface-emitting lasers (VCSELs) is presented. The paper is divided into two major parts. First, the effects of temperature on device characteristics are discussed, including the temperature dependence of the longitudinal mode spectra, the threshold current, the transverse-mode structure, and the output power. A new condition is formulated for thermal matching of the Bragg mirrors and the spacer region and a comparison is made between characteristic temperatures for the threshold current (T0) and for the external quantum efficiency (Tη). In the second part, various approaches to thermal modeling of VCSELs are described. Both simplified and comprehensive thermal models are considered and both analytical and numerical approaches are discussed. A new analytical approximate method for analysis of heat-flux spreading in multilayer structures is described. The most important results obtained with the aid of these models are presented. In particular, we show that the current dependence of thermal resistance is very sensitive to VCSEL structure, and is strongly influenced by the relative distribution of heat sources and their location with respect to the heat sink.


1996 ◽  
Vol 448 ◽  
Author(s):  
R.D. Twesten ◽  
D. M. Follstaedt ◽  
K. D. Choquette

AbstractThe oxidation of high Al content AlxGa1-xAs has received much attention due to its use in oxide-aperture, vertical-cavity surface emitting lasers (VCSELs) and for passivating AlAs against environmental degradation. We have recently identified the spinel, gamma phase of Al2O3 in layers laterally oxidized in steam at 450°C for =0.98 & 0.92 and have seen evidence for an amorphous precursor to the gamma phase. At the interface with the unoxidized AlxGa1-xAs , an ~17nm amorphous phase remains which could account for the excellent electrical properties of oxide-confined VCSELs and help reduce stress concentrations at the oxide terminus.


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