electron tunnelling
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2021 ◽  
Vol 2122 (1) ◽  
pp. 012011
Author(s):  
I Filikhin ◽  
Yu B Kuzmichev ◽  
V Mitic ◽  
Th. Peterson ◽  
B Vlahovic

Abstract We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological efective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the efect of QD-QW geometry variations. The relation to the PL experiments is shown.


2021 ◽  
Vol 51 (10) ◽  
pp. 920-924
Author(s):  
V P Dzyuba ◽  
A V Amosov ◽  
Yuriy Nikolaevich Kulchin

2020 ◽  
Vol 7 (3) ◽  
pp. 697-706 ◽  
Author(s):  
James F. Edmondson ◽  
Gabriel N. Meloni ◽  
Giovanni Costantini ◽  
Patrick R. Unwin

2019 ◽  
Vol 16 (1) ◽  
pp. 75-82 ◽  
Author(s):  
Yutian Wen ◽  
N. Ares ◽  
F. J. Schupp ◽  
T. Pei ◽  
G. A. D. Briggs ◽  
...  

Nano Energy ◽  
2019 ◽  
Vol 60 ◽  
pp. 836-840 ◽  
Author(s):  
Sirui Feng ◽  
Binzhong Dong ◽  
Yanghua Lu ◽  
Lingfeng Yin ◽  
Bailin Wei ◽  
...  

2019 ◽  
Vol 66 (10) ◽  
pp. 1052-1070 ◽  
Author(s):  
C. Hofmann ◽  
A. S. Landsman ◽  
U. Keller

Nanoscale ◽  
2019 ◽  
Vol 11 (44) ◽  
pp. 21376-21385 ◽  
Author(s):  
Yunhao Zhao ◽  
Chenyuan Cai ◽  
Yi Zhang ◽  
Xuebing Zhao ◽  
Yingqiang Xu ◽  
...  

Elementary segregation and diffusion could be utilized in band engineering to modulate potential barriers for the control of electron tunnelling.


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