Modeling electron transfer from the barrier in InAs/GaAs quantum dot-well structure

Abstract We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological efective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the efect of QD-QW geometry variations. The relation to the PL experiments is shown.

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Electron transfer from the barrier in InAs/GaAs quantum dot-well structure

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2019.113629 ◽

2019 ◽

Vol 114 ◽

pp. 113629 ◽

Cited By ~ 5

Author(s):

I. Filikhin ◽

Th. Peterson ◽

B. Vlahovic ◽

S.P. Kruchinin ◽

Yu.B. Kuzmichev ◽

...

Keyword(s):

Electron Transfer ◽

Quantum Dot ◽

Gaas Quantum Dot

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Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers

Applied Physics Letters ◽

10.1063/1.1290601 ◽

2000 ◽

Vol 77 (10) ◽

pp. 1419-1421 ◽

Cited By ~ 65

Author(s):

F. Klopf ◽

J. P. Reithmaier ◽

A. Forchel

Keyword(s):

Quantum Dot ◽

Quantum Well ◽

Active Layer ◽

High Power ◽

Quantum Well Lasers ◽

Layer Versus ◽

Quantum Dot Lasers ◽

Highly Efficient ◽

Gaas Quantum Dot

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InGaAs/GaAs quantum-dot–quantum-well heterostructure formed by submonolayer deposition

Nanotechnology ◽

10.1088/0957-4484/14/12/005 ◽

2003 ◽

Vol 14 (12) ◽

pp. 1259-1261 ◽

Cited By ~ 22

Author(s):

Zhangcheng Xu ◽

Kristjan Leosson ◽

Dan Birkedal ◽

Vadim Lyssenko ◽

Jørn M Hvam ◽

...

Keyword(s):

Quantum Dot ◽

Quantum Well ◽

Gaas Quantum Dot

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Coherent Linewidths of Interfacial GaAs Quantum Dot Excitons and Incoherent Coupling from Quantum Well Excitons

10.1364/ls.2010.lwh5 ◽

2010 ◽

Author(s):

A. D. Bristow ◽

G. Moody ◽

M. E. Siemens ◽

X. Dai ◽

D. Karaiskaj ◽

...

Keyword(s):

Quantum Dot ◽

Quantum Well ◽

Gaas Quantum Dot

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Investigation of the Electron Energy Spectrum in a Three Dimensional Regimented Tetragonal Quantum Dot Superlattice

MRS Proceedings ◽

10.1557/proc-677-aa4.4 ◽

2001 ◽

Vol 677 ◽

Cited By ~ 1

Author(s):

Olga L. Lazarenkova ◽

Alexander A. Balandin

Keyword(s):

Quantum Dots ◽

Energy Spectrum ◽

Quantum Dot ◽

Electron Energy ◽

Electronic Band Structure ◽

Three Dimensional ◽

Electron Energy Spectrum ◽

Real Crystal ◽

Electronic Band ◽

Gaas Quantum Dot

ABSTRACTWe analyze the electron energy spectrum in three-dimensional regimented arrays of semiconductor quantum dots. The coupling among quantum dots results in formation of three- dimensional electron mini-bands. Changing the size of quantum dots, inter-dot distance, barrier height and regimentation, one can control the electronic band structure of this quantum dot superlattice, which can also be referred to as quantum dot crystal due to its structure and energy spectrum that resemble those of a real crystal. Results of computer simulations carried out for a tetragonal InAs/GaAs quantum dot superlattice show that the electron density of states, effective mass tensor and other properties are different from those of bulk and conventional quantum well superlattices.

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EXTENDED WAVELENGTH (1.0 to 1.3 μm) InGaAs/GaAs QUANTUM DOT GaAs-BASED VERTICAL-CAVITY SURFACE-EMITTING AND LATERAL-CAVITY EDGE-EMITTING LASERS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156498000403 ◽

1998 ◽

Vol 09 (04) ◽

pp. 979-1005

Author(s):

D. G. DEPPE ◽

D. L. HUFFAKER

Keyword(s):

Quantum Dot ◽

Quantum Wells ◽

Three Dimensional ◽

Active Regions ◽

Cavity Surface ◽

Novel Device ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Gaas Quantum Dot ◽

Vertical Cavity

An important advance in InGaAs/GaAs quantum dot lasers has been the demonstration of lasing at wavelengths significantly longer than that possible using InGaAs strained quantum wells, extending beyond 1.3 μm. These fully GaAs-based active regions are compatible with commercial vertical-cavity surface-emitting laser (VCSEL) technology based on selective oxidation, and offer novel performance due to their three-dimensional electronic confinement. This chapter reviews the status of long wavelength quantum dot edge-emitting lasers and VCSELs, and presents some of the new physical principles needed to understand their novel device characteristics.

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