Исследование критической температуры T-=SUB=-c-=/SUB=- гомофазных сверхпроводников (Bi-=SUB=-1.7-=/SUB=-Pb-=SUB=-0.3-=/SUB=-Sr-=SUB=-2-=/SUB=-Ca-=SUB=-(n-1)-=/SUB=-Cu-=SUB=-n-=/SUB=- O-=SUB=-y-=/SUB=- (n=3, 4, 5) и вольт-амперных характеристик сэндвич-пар полупроводник InP-сверхпроводник Bi/Pb (2223, 2234, 2245)

The electrophysical properties of semiconductor–superconductor sandwich pairs (InP–Bi/Pb 2223, 2234, 2245) are investigated, in which homophase superconductors based on bismuth cuprates with high reproducible critical temperatures of superconducting transition T _ c = 107–180 K are used. The advantage of melt solar technology for obtaining superconducting materials is demonstrated. The microstructure and phase composition of strongly anisotropic superconductors with nominal composition Bi_1.7Pb_0.3Sr_2Ca_( n _– 1)Cu_ n O_ y ( n = 3, 4, 5) are researched. A technique of experimental determination of superconducting transition critical temperatures T _ c in single-phase and homophase HTSC samples is presented. The current–voltage characteristics of InP–Bi/Pb pairs are investigated. The relationship between the electrical resistance of sandwich pairs and superconductor critical temperature T _ c is established.

New insight on bismuth cuprates with incommensurate modulated structures

The incommensurate modulated crystal structure of Bi2.27Sr1.73CuO6 + δ(2201) phase [a= 5.3874 (5),b= 5.3869 (4),c= 24.579 (3) Å; β = 90.01 (1)°,q= 0.2105 (3)a* + 0.538 (4)c*,Z= 4, the (3 + 1)-dimensional monoclinicA2/a(α0γ) group] has been refined withR= 0.041,wR= 0.052 from X-ray single-crystal data including up to third-order satellite reflections. The same structure has also been considered as incommensurate composite witha2= 2.437,b2= 5.387,c2= 24.614, β2= 93.06,q2= 0.4524a2*−0.243c2*and the (3 + 1)-dimensionalA2/m(α0γ)0sgroup for the second component. Both approaches give quite similar results. The structure possesses oxygen disorder in the oxygen-rich region of the BiO layer. An extra O atom is determined in the bridging position shifted ∼ 0.6 Å from BiO towards the SrO layer. Its presence is the cause of the tremendous increase of the bismuthU11atomic displacement parameter in ∼ 20% of the unit cells (t= −0.05–0.15). Vacancies are determined in the oxygen site of the SrO layer, which may result in the oxygen content variation with annealing at different oxygen pressures. The total refined oxygen content 6.18 (1) corresponds to the results of chemical analysis.