A comparative study of the effect of ions of different atomic masses on the magnetoresistive properties of Co90Fe10/Cu superlattices

The effect of inert gas ions with different atomic masses (Ar+, Xe+) on the magnetoresistance of Co90Fe10/Cu superlattices deposited on a silicon substrate has been investigated by comparison. The Ar+ ion irradiation has been found to decrease the magnetoresistance more significantly than Xe+ ion irradiation, which seems to be due to a larger average projective range for Ar+ (Rp = 5–6 nm) than that for Xe+ (Rp = 3.3–4.3 nm) and, accordingly, a greater depth of the atom mixing zone (∽(2–3)×Rp) when ions move from the top layers of the superlattice toward the substrate.

Ion Mixing in Film-Substrate Systems Under Polyenergetic Ar+Ion Beam Irradiation

The results of alloying Al, Fe, and Mo surfaces by Be, Al, Ni, Sn under polyenergetic Ar+ ion beam irradiation with a mean energy of 10 keV have been presented. It has been shown that along with film and substrate materials sputtering there takes place the penetration of film atoms into substrate materials at a depth which is significantly greater (by a factor of 3… 10) than the projective range of ions in the given materials. The analysis of possible alloying depths with regard to different models (pure radiation range for monoenergetic ion beams; when the decrease of concentration is approximated by the exponential dependence; when the internal forcing out stresses are taken into account) for equal irradiation dose shows that the model, in which the migration of implanted atoms in the fields of forcing out stresses are considered, gives most close agreement between the calculated data and experimental ones.