scholarly journals A comparative study of the effect of ions of different atomic masses on the magnetoresistive properties of Co90Fe10/Cu superlattices

2021 ◽  
Vol 2144 (1) ◽  
pp. 012028
Author(s):  
N V Gushchina ◽  
K V Shalomov ◽  
V V Ovchinnikov ◽  
N S Bannikova ◽  
R S Zavornitsyn ◽  
...  

Abstract The effect of inert gas ions with different atomic masses (Ar+, Xe+) on the magnetoresistance of Co90Fe10/Cu superlattices deposited on a silicon substrate has been investigated by comparison. The Ar+ ion irradiation has been found to decrease the magnetoresistance more significantly than Xe+ ion irradiation, which seems to be due to a larger average projective range for Ar+ (Rp = 5–6 nm) than that for Xe+ (Rp = 3.3–4.3 nm) and, accordingly, a greater depth of the atom mixing zone (∽(2–3)×Rp) when ions move from the top layers of the superlattice toward the substrate.

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Iwase ◽  
L. E. Rehn ◽  
P. M. Baldo ◽  
L. Funk

AbstractThe effects of cascade remnants on Freely Migrating Defects (FMD) were studied by measuring Radiation-Induced Segregation (RIS) in Cu-l%Au at 400°C during simultaneous irradiation with 1.5-MeV He and (400-800)-keV heavy ions (Ne, Ar or Cu). The large RIS observed during 1.5-MeV He-only irradiation was dramatically suppressed under simultaneous heavy ion irradiation. For Cu simultaneous irradiation, the suppression disappeared immediately after the Cu irradiation ceased, while for simultaneous inert gas (Ne or Ar) irradiation, the suppression persisted after the ion beam was turned off. These results demonstrate that the displacement cascades created by heavy ions introduce additional annihilation sites, which reduce the steady-state FMD concentrations. As the cascade remnants produced by Cu ions are thermally unstable at 400°C, the RIS suppression occurs only during simultaneous irradiation. On the other hand, the inert gas atoms which accumulate in the specimen apparently stabilize the cascade remnants, allowing the suppression to persist.


2006 ◽  
Vol 77 (1) ◽  
pp. 64-72 ◽  
Author(s):  
Pavel V. Krasovskii ◽  
Wolfgang Gruner ◽  
Konstantin V. Grigorovitch

1992 ◽  
Vol 191-194 ◽  
pp. 1289-1294 ◽  
Author(s):  
Dale E. Alexander ◽  
R.C. Birtcher
Keyword(s):  

1997 ◽  
Vol 505 ◽  
Author(s):  
G. Tas ◽  
J. J. Loomis ◽  
H. J. Maris ◽  
A. A. Bailes ◽  
L. E. Seiberling

ABSTRACTWe have used picosecond ultrasonics to study the effects of ion irradiation on the interfacial bonding between gold films and a silicon substrate. Acoustic vibrations are excited in the metal film when a picosecond light pulse is absorbed. The rate at which these vibrations damp out via sound transmission across the interface into the substrate gives a measure of the adhesion of the film to the substrate. The films were irradiated with 2.5 MeV helium ions with doses between 7×1014 and 8×1016 ions cm-2. The adhesion, as measured by the rate of acoustic damping, was found to be significantly improved by the ion irradiation.


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