SELF-CONSISTENT MODELING OF MOSFET QUANTUM EFFECTS BY SOLVING THE SCHRÖDINGER AND BOLTZMANN SYSTEM OF EQUATIONS

A new method for investigating quantum confinement effects in MOSFETs is presented. The method is based on the numerical solution of the Schrödinger and Boltzmann system of equations. A quantum Boltzmann equation is developed by replacing the classical potential with a quantum potential. The technique naturally accounts for highly nonequilibrium effects including velocity overshoot. The subbands are calculated and then populated using nonequilibrium statistics. Modeling results show the electron concentration and electron current density peaks shifted away from the interface. Calculations show reduced channel concentration which leads to lower drain current for the quantum case. A quantum distribution function is obtained.