Modal Gain Characteristics of A Two-section InGaAs/GaAs Double Quantum Well Passively Mode-locked Laser with Asymmetric Waveguide

Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, concluding the layers of P-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ∼1.06µm, with a fundamental repetition rate at ∼19.56GHz have been demonstrated. Modal gain characteristics, such as a gain bandwidth and a gain peak wavelength of the MLL, as a function of the saturable absorber (SA) bias voltage (Va) as well as the injection current of gain section (Ig), were investigated by the Hakki-Paoli method. With the increase of Va, the lasing wavelength and net modal gain peak of the MLL both exhibited red-shifts to longer wavelength significantly, while the modal gain bandwidth was compressed. Both the net modal gain bandwidth and gain peak of the MLL followed a polynomial distribution versus the reverse bias at the absorber section. In addition, for the first time, it was found that Va had an obvious effect on the differential gain of the MLL.

A comparative analysis of rectangular cut edge patch antenna on various substrate

An analysis of simple microstrip patch antenna has been designed which comprises of various dielectric substrates that is placed in between metallic patch and ground. Substrates used in this design Epoxy (FR4), Rogers duroid 6002 (tm) with various relative permittivity 2.94 and 2.2 and thickness of 3.2mm. Some applications for the designed frequency are wireless fidelity, WLAN application, Bluetooth. The proposed antenna is designed in HFSSV15 Software operating at 2.4 GHz frequency which renders return loss not more than -10dB. The purpose of this paper was analyzation and simulation for the designed antenna with various parameters like gain, peak gain, efficiency, return loss, band-width when the structure and substrate changes.