obstacle number
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2021 ◽  
Author(s):  
Atena boroughani ◽  
Edris Faizabadi ◽  
Hamed Hedayati

Abstract The transportation of charge carriers for monolayer phosphorene superlattice has been investigated utilizing a transfer matrix method. Also, the efficacy of structural parameters has been studied on the transmission of charge carriers for the system. Our findings demonstrated that the barrier number at the superlattice structures performs an essential role in the transportation probability, that can be utilized in the design of nanoelectronic sets. Further, it can be comprehended that the transmission probability of one for the normal incident has occurred in twenty obstacles. On the other hand, the transmission probability of close to one has occurred in lower landing energies by increasing the obstacle number. As well, it has been understood the transmission probability of close to one by enhancing the barrier number can happen in barriers with a smaller width. According to the results, phosphorene can be used in the novel advances of two dimensional semiconductor devices in electronic applications.


2021 ◽  
Author(s):  
Atena boroughani ◽  
Edris Faizabadi ◽  
Hamed Hedayati

Abstract The transportation of charge carriers for monolayer phosphorene superlattice has been investigated utilizing a transfer matrix method. Also, the efficacy of structural parameters has been studied on the transmission of charge carriers for the system. Our findings demonstrated that the barrier number at the superlattice structures performs an essential role in the transportation probability, that can be utilized in the design of nanoelectronic sets. Further, it can be comprehended that the transmission probability of one for the normal incident has occurred in twenty obstacles. On the other hand, the transmission probability of close to one has occurred in lower landing energies by increasing the obstacle number. As well, it has been understood the transmission probability of close to one by enhancing the barrier number can happen in barriers with a smaller width. According to the results, phosphorene can be used in the novel advances of two dimensional semiconductor devices in electronic applications.


2017 ◽  
Vol 21 (6) ◽  
pp. 1107-1119
Author(s):  
Leah Wrenn Berman ◽  
Glenn G. Chappell ◽  
Jill R. Faudree ◽  
John Gimbel ◽  
Chris Hartman ◽  
...  
Keyword(s):  

10.37236/4373 ◽  
2015 ◽  
Vol 22 (3) ◽  
Author(s):  
Vida Dujmović ◽  
Pat Morin

The obstacle number is a new graph parameter introduced by Alpert, Koch, and Laison (2010). Mukkamala et al. (2012) show that there exist graphs with $n$ vertices having obstacle number in $\Omega(n/\log n)$. In this note, we up this lower bound to $\Omega(n/(\log\log n)^2)$. Our proof makes use of an upper bound of Mukkamala et al. on the number of graphs having obstacle number at most $h$ in such a way that any subsequent improvements to their upper bound will improve our lower bound.


10.37236/2380 ◽  
2012 ◽  
Vol 19 (2) ◽  
Author(s):  
Padmini Mukkamala ◽  
János Pach ◽  
Dömötör Pálvölgyi

Given a graph $G$, an obstacle representation of $G$ is a set of points in the plane representing the vertices of $G$, together with a set of connected obstacles such that two vertices of $G$ are joined by an edge if and only if the corresponding points can be connected by a segment which avoids all obstacles. The obstacle number of $G$ is the minimum number of obstacles in an obstacle representation of $G$. It is shown that there are graphs on $n$ vertices with obstacle number at least $\Omega({n}/{\log n})$.


2011 ◽  
Vol 27 (3) ◽  
pp. 465-473 ◽  
Author(s):  
János Pach ◽  
Deniz Sarıöz
Keyword(s):  

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