Sc3N@C80 and La@C82 doped graphene for a new class of optoelectronic devices

Hybrid graphene photodetectors (PDs) with endohedral Sc3N@C80 and La@C82 were used by the Kaul Research Group at the University of North Texas to dope graphene p-type and n-type, respectively, that resulted in significant optoelectronic property enhancement of the PDs.

Optical-quality controllable wet-chemical doping of graphene through a uniform, transparent and low-roughness F4-TCNQ/MEK layer

We developed a uniform, transparent and low-roughness F4-TCNQ/MEK layer to controllably dope graphene with superior optical quality.