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c2f6 plasmas
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Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas
Korean Journal of Chemical Engineering
◽
10.1007/s11814-019-0449-x
◽
2020
◽
Vol 37
(2)
◽
pp. 374-379
◽
Cited By ~ 1
Author(s):
Jun-Hyun Kim
◽
Chang-Koo Kim
Keyword(s):
High Density
◽
Etch Rates
◽
C2f6 Plasmas
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SiO2 etching in inductively coupled C2F6 plasmas: surface chemistry and two-dimensional simulations
Thin Solid Films
◽
10.1016/s0040-6090(00)01156-1
◽
2000
◽
Vol 374
(2)
◽
pp. 311-325
◽
Cited By ~ 26
Author(s):
John Feldsien
◽
Doosik Kim
◽
Demetre J Economou
Keyword(s):
Surface Chemistry
◽
Two Dimensional
◽
Inductively Coupled
◽
C2f6 Plasmas
◽
Sio2 Etching
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