Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas

2020 ◽  
Vol 37 (2) ◽  
pp. 374-379 ◽  
Author(s):  
Jun-Hyun Kim ◽  
Chang-Koo Kim
Keyword(s):  
High Density ◽  
Etch Rates ◽  
C2f6 Plasmas

High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

1999 ◽  
Vol 596 ◽  
Author(s):  
K. P. Lee ◽  
K. B. Jung ◽  
A Srivastava ◽  
D. Kumar ◽  
R. K. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Single Layer ◽  
Dry Etching ◽  
High Density ◽  
Pattern Transfer ◽  
Removal Rates ◽  
Etch Rates ◽  
Density Plasma ◽  
Maximum Removal

AbstractHigh density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 Å-min−1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 Å min−1 for both materials were achieved with selectivities of ∼16 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions.

Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas

1997 ◽  
Vol 468 ◽  
Author(s):  
R. J. Shul ◽  
R. D. Briggs ◽  
J. Han ◽  
S. J. Pearton ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Chemical Nature ◽  
Photonic Devices ◽  
High Density ◽  
Low Degree ◽  
Patterning Technique ◽  
High Bond ◽  
Dc Bias ◽  
Etch Rates ◽  
Surface Morphologies

ABSTRACTFabrication of group-Ill nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropie profiles, smooth surface morphologies, etch rates often exceeding 0.5 μm/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to their high bond energies and their relatively inert chemical nature as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 2 to 4 orders of magnitude higher than conventional RIE systems. GaN etch rates as high as -1.3 μm/min have been reported in ECR generated ICI plasmas at -150 V dc-bias. In this study, we report high-density GaN etch results for ECR- and ICP-generated plasmas as a function of Cl2- and BCl3-based plasma chemistries.

scholarly journals Selective Etching Of Wide Bandgap Nitrides

1997 ◽  
Vol 483 ◽  
Author(s):  
R. J. Shul ◽  
C. G. Willison ◽  
M. M. Bridges ◽  
J. Han ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
High Density ◽  
Chamber Pressure ◽  
Rf Power ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Patterning Technique ◽  
Etch Rates ◽  
Coupled Plasmas

AbstractHigh-density plasma etching has been an effective patterning technique for the group-III nitrides due to ion fluxes which are 2 to 4 orders of magnitude higher than more conventional reactive ion etch (RIE) systems. GaN etch rates exceeding 0.68 μm/min have been reported in Cl2/H2/Ar inductively coupled plasmas (ICP) at -280 V dc-bias. Under these conditions, the etch mechanism is dominated by ion bombardment energies which can induce damage and minimize etch selectivity. High selectivity etch processes are often necessary for heterostructure devices which are becoming more prominent as growth techniques improve. In this study, we will report high-density ICP etch rates and selectivities for GaN, AIN, and InN as a function of cathode power, ICP-source power, and chamber pressure. GaN:AIN selectivities > 8:1 were observed in a Cl2/Ar plasma at 10 mTorr pressure, 500 W ICP-source power, and 130 W cathode rf-power, while the GaN:InN selectivity was optimized at ∼ 6.5:1 at 5 mTorr, 500 W ICP-source power, and 130 W cathode rf-power.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

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