2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)
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9781479933877, 9781479933860

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2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2013.6707478 ◽

2013 ◽

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Resistive switching in Pt/Ta2O5/TiN structure for nonvolatile memory application

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2013.6707472 ◽

2013 ◽

Author(s):

Jian-Yang Lin ◽

Jyun-Hao Chen

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory

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Front cover

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2013.6707479 ◽

2013 ◽

Keyword(s):

Front Cover

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Effective absorption enhancement in dielectric slab with embedded single-strip and paired-strips gold nanoantennas

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2013.6707455 ◽

2013 ◽

Author(s):

Zih-Ying Yang ◽

Kuo-Ping Chen

Keyword(s):

Absorption Enhancement ◽

Dielectric Slab ◽

Effective Absorption ◽

Single Strip

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Comprehensive device reliability and oxide traps distribution analysis by the low frequency noise in ultra-thin body SOI (UTBSOI) MOSFETs

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2013.6707460 ◽

2013 ◽

Author(s):

Cheng-Li Lin ◽

Chun-Hung Soh ◽

Wen-Kuan Yeh ◽

Chien-Ting Lin ◽

Chun-Ming Wu ◽

...

Keyword(s):

Low Frequency ◽

Thin Body ◽

Frequency Noise ◽

Distribution Analysis ◽

Low Frequency Noise ◽

Device Reliability ◽

Oxide Traps

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Development of ultra-violet sensing devices with zinc-oxide thin-films on oxidized nano-porous-silicon substrates

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2013.6707467 ◽

2013 ◽

Author(s):

Kuen-Hsien Wu ◽

Chia-Chun Tang ◽

Sheng-Chun Lin

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Porous Silicon ◽

Ultra Violet ◽

Silicon Substrates ◽

Oxide Thin Films

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Fabrication of metal nanoparticles from metal-filled carbon nanofibers and their size control by heating

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2013.6707468 ◽

2013 ◽

Author(s):

T. Tokunaga ◽

T. Kanematsu ◽

T. Ota ◽

K. Sasaki ◽

T. Yamamoto ◽

...

Keyword(s):

Metal Nanoparticles ◽

Carbon Nanofibers ◽

Size Control

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Design of a low on resistance high voltage (<100V) novel 3D NLDMOS with side STI and single P-top layer based on 0.18um BCD process technology

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2013.6707459 ◽

2013 ◽

Cited By ~ 1

Author(s):

Ankit Kumar ◽

Emita Yulia Hapsari ◽

Vasanth Kumar ◽

Aryadeep Mrinal ◽

Gene Sheu ◽

...

Keyword(s):

High Voltage ◽

Process Technology

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Effect of trench depth and trench angle in a high voltage polyflanked-Super junction MOSFET

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2013.6707458 ◽

2013 ◽

Author(s):

Kumar M P Vijay ◽

Grama Srinath Shreyas ◽

Karuna Nidhi ◽

Neelam Agarwal ◽

Ankit Kumar ◽

...

Keyword(s):

High Voltage

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Tin (Sn) for enhancing performance in silicon CMOS

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2013.6707470 ◽

2013 ◽

Cited By ~ 1

Author(s):

Aftab M. Hussain ◽

Hossain M. Fahad ◽

Nirpendra Singh ◽

Galo A. Torres Sevilla ◽

Udo Schwingenschlogl ◽

...

Keyword(s):

Silicon Cmos

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2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Copyright

Resistive switching in Pt/Ta2O5/TiN structure for nonvolatile memory application

Front cover

Effective absorption enhancement in dielectric slab with embedded single-strip and paired-strips gold nanoantennas

Comprehensive device reliability and oxide traps distribution analysis by the low frequency noise in ultra-thin body SOI (UTBSOI) MOSFETs

Development of ultra-violet sensing devices with zinc-oxide thin-films on oxidized nano-porous-silicon substrates

Fabrication of metal nanoparticles from metal-filled carbon nanofibers and their size control by heating

Design of a low on resistance high voltage (<100V) novel 3D NLDMOS with side STI and single P-top layer based on 0.18um BCD process technology

Effect of trench depth and trench angle in a high voltage polyflanked-Super junction MOSFET

Tin (Sn) for enhancing performance in silicon CMOS

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)
Latest Publications