oxide traps
Recently Published Documents


TOTAL DOCUMENTS

160
(FIVE YEARS 1)

H-INDEX

26
(FIVE YEARS 0)

2021 ◽  
pp. 108123
Author(s):  
E. Coleman ◽  
G. Mirabelli ◽  
P. Bolshakov ◽  
P. Zhao ◽  
E. Caruso ◽  
...  
Keyword(s):  




2020 ◽  
Vol 67 (11) ◽  
pp. 4741-4748 ◽  
Author(s):  
Satyam Kumar ◽  
R. Anandkrishnan ◽  
Narendra Parihar ◽  
Souvik Mahapatra


2020 ◽  
Vol 67 (10) ◽  
pp. 4372-4378 ◽  
Author(s):  
Enrico Caruso ◽  
Jun Lin ◽  
Scott Monaghan ◽  
Karim Cherkaoui ◽  
Farzan Gity ◽  
...  
Keyword(s):  


Vacuum ◽  
2020 ◽  
Vol 179 ◽  
pp. 109479
Author(s):  
Dun-Bao Ruan ◽  
Kuei-Shu Chang-Liao ◽  
Wen-Yen Hsu ◽  
Shih-Han Yi ◽  
Yao-Jen Lee


2020 ◽  
Vol 1004 ◽  
pp. 671-679 ◽  
Author(s):  
Salvatore Cascino ◽  
Mario Saggio ◽  
Alfio Guarnera

In this paper, we report on the simulation results of instability threshold voltage of SiC MOSFET device. Hysteresis cycles of threshold voltage suggest that trapping and detrapping phenomena of electrons from the SiC layer into the oxide traps occur. Experiment suggests that positive threshold voltage shifts (ΔVth) caused by a positive stress voltage to the gate, are almost fully recovered by applying negative stress voltage. This work assumes uniform trap densities extending from SiC interface at a limited depth into oxide.



2020 ◽  
Vol 29 (3) ◽  
pp. 038501
Author(s):  
He-Kun Zhang ◽  
Xuan Tian ◽  
Jun-Peng He ◽  
Zhe Song ◽  
Qian-Qian Yu ◽  
...  




Author(s):  
Tanvir Ahmed ◽  
Zeynep Celik-Butler ◽  
Fan-Chi Hou ◽  
Shaoping Tang ◽  
Guru Mathur


Sign in / Sign up

Export Citation Format

Share Document