III-Nitride Semiconductors: Electrical, Structural and Defects Properties
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Subject index

III-Nitride Semiconductors: Electrical, Structural and Defects Properties ◽

10.1016/b978-044450630-6/50013-1 ◽

2000 ◽

pp. 445-448

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Radiation and processed induced defects in GaN

III-Nitride Semiconductors: Electrical, Structural and Defects Properties ◽

10.1016/b978-044450630-6/50009-x ◽

2000 ◽

pp. 251-286 ◽

Author(s):

F.D. Auret ◽

S.A. Goodman

Keyword(s):

Induced Defects

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Introduction to defects and structural properties of III-nitride semiconductors

III-Nitride Semiconductors: Electrical, Structural and Defects Properties ◽

10.1016/b978-044450630-6/50002-7 ◽

2000 ◽

pp. 1-15 ◽

Author(s):

M.O. Manasreh

Keyword(s):

Structural Properties ◽

Nitride Semiconductors

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Persistent photoconductivity in III-nitrides

III-Nitride Semiconductors: Electrical, Structural and Defects Properties ◽

10.1016/b978-044450630-6/50007-6 ◽

2000 ◽

pp. 151-191

Author(s):

H.X. Jiang ◽

J.Y. Lin

Keyword(s):

Persistent Photoconductivity

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Optical phonon confinement in nitride-based heterostructures

III-Nitride Semiconductors: Electrical, Structural and Defects Properties ◽

10.1016/b978-044450630-6/50012-x ◽

2000 ◽

pp. 383-443

Author(s):

N.A. Zakhleniuk ◽

C.R. Bennett ◽

M. Babiker ◽

B.K. Ridley

Keyword(s):

Optical Phonon ◽

Phonon Confinement

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Characterization of native point defects in GaN by positron annihilation spectroscopy

III-Nitride Semiconductors: Electrical, Structural and Defects Properties ◽

10.1016/b978-044450630-6/50006-4 ◽

2000 ◽

pp. 109-149 ◽

Author(s):

K. Saarinen

Keyword(s):

Positron Annihilation ◽

Point Defects ◽

Positron Annihilation Spectroscopy ◽

Native Point Defects

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Dopants in GaN

III-Nitride Semiconductors: Electrical, Structural and Defects Properties ◽

10.1016/b978-044450630-6/50003-9 ◽

2000 ◽

pp. 17-49 ◽

Author(s):

John T. Torvik

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Front matter

III-Nitride Semiconductors: Electrical, Structural and Defects Properties ◽

10.1016/b978-0-444-50630-6.50014-3 ◽

2000 ◽

pp. i-iii

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Magnetic resonance studies of defects in GaN and related compounds

III-Nitride Semiconductors: Electrical, Structural and Defects Properties ◽

10.1016/b978-044450630-6/50005-2 ◽

2000 ◽

pp. 77-108

Author(s):

M. Palczewska ◽

M. Kamińska

Keyword(s):

Magnetic Resonance ◽

Magnetic Resonance Studies ◽

Related Compounds

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Copyright

III-Nitride Semiconductors: Electrical, Structural and Defects Properties ◽

10.1016/b978-0-444-50630-6.50015-5 ◽

2000 ◽

pp. iv

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