2020 IEEE International Memory Workshop (IMW)
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45
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1
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Published By IEEE

9781728163062
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Statistical Modeling and Understanding of HRS Retention in 2.5 Mb HfO2 based ReRAM

2020 ◽  
Author(s):  
S. Wiefels ◽  
U. Bottger ◽  
S. Menzel ◽  
D. J. Wouters ◽  
R. Waser
Keyword(s):  
Statistical Modeling

Optimization of RRAM and OTS selector for advanced low voltage CMOS compatibility

2020 ◽  
Author(s):  
J. Minguet Lopez ◽  
D. Alfaro Robayo ◽  
L. Grenouillet ◽  
C. Carabasse ◽  
G. Navarro ◽  
...  
Keyword(s):  
Low Voltage ◽  
Cmos Compatibility

scholarly journals Isotropically coercive free layer integration in a magnetic tunnel junction for neuromorphic applications

2020 ◽  
Author(s):  
Marco Mansueto ◽  
Antoine Chavent ◽  
Ricardo Sousa ◽  
Liliana D. Buda-Prejbeanu ◽  
Ioan L. Prejbeanu ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Free Layer

A 2T-1R Cell Array with High Dynamic Range for Mismatch-Robust and Efficient Neurocomputing

2020 ◽  
Author(s):  
Shubham Sahay ◽  
Mohammad Bavandpour ◽  
Mohammad Reza Mahmoodi ◽  
Dmitri Strukov
Keyword(s):  
Dynamic Range ◽  
High Dynamic Range ◽  
Cell Array ◽  
High Dynamic

Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance

2020 ◽  
Author(s):  
J. Molina ◽  
T. Mimura ◽  
Y. Nakamura ◽  
T. Shimizu ◽  
H. Funakubo ◽  
...  
Keyword(s):  
Interface Engineering

Performance and Reliability of 4 Mb eFLASH Memory Array Featuring 28 nm Split-Gate Cell with HKMG Select Transistor

2020 ◽  
Author(s):  
S. Jourba ◽  
N. Bollon ◽  
C. Decobert ◽  
G. Festes ◽  
B. Bertello ◽  
...  
Keyword(s):  
Memory Array ◽  
28 Nm
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