2012 4th IEEE International Memory Workshop
Latest Publications

TOTAL DOCUMENTS

70

(FIVE YEARS 0)

H-INDEX

10

(FIVE YEARS 0)

Published By IEEE

9781467310819, 9781467310796

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Lowering the Reset Current and Power Consumption of Phase-Change Memories with Carbon-Doped Ge2Sb2Te5

2012 4th IEEE International Memory Workshop ◽

10.1109/imw.2012.6213683 ◽

2012 ◽

Author(s):

Q. Hubert ◽

C. Jahan ◽

A. Toffoli ◽

G. Navarro ◽

S. Chandrashekar ◽

...

Keyword(s):

Power Consumption ◽

Phase Change ◽

Download Full-text

Inherent Issues and Challenges of Program Disturbance of 3D NAND Flash Cell

2012 4th IEEE International Memory Workshop ◽

10.1109/imw.2012.6213659 ◽

2012 ◽

Author(s):

Keon-Soo Shim ◽

Eun-Seok Choi ◽

Sung-Wook Jung ◽

Se-Hoon Kim ◽

Hyun-Seung Yoo ◽

...

Keyword(s):

Download Full-text

Highly Reliable Flash Memory with Self-Aligned Split-Gate Cell Embedded into High Performance 65nm CMOS for Automotive & Smartcard Applications

2012 4th IEEE International Memory Workshop ◽

10.1109/imw.2012.6213670 ◽

2012 ◽

Author(s):

D. Shum ◽

J. R. Power ◽

R. Ullmann ◽

E. Suryaputra ◽

K. Ho ◽

...

Keyword(s):

Flash Memory ◽

High Performance

Download Full-text

Bipolar-Switching Model of RRAM by Field- and Temperature-Activated Ion Migration

2012 4th IEEE International Memory Workshop ◽

10.1109/imw.2012.6213648 ◽

2012 ◽

Author(s):

S. Larentis ◽

F. Nardi ◽

S. Balatti ◽

D. Ielmini ◽

D. C. Gilmer

Keyword(s):

Ion Migration ◽

Switching Model ◽

Bipolar Switching

Download Full-text

Investigation of Verify-Programming Methods to Achieve 10 Million Cycles for 50nm HfO2 ReRAM

2012 4th IEEE International Memory Workshop ◽

10.1109/imw.2012.6213665 ◽

2012 ◽

Author(s):

K. Higuchi ◽

T. O. Iwasaki ◽

K. Takeuchi

Download Full-text

Title Page

2012 4th IEEE International Memory Workshop ◽

10.1109/imw.2012.6213634 ◽

2012 ◽

Keyword(s):

Download Full-text

Resistance Drift Model for Conductive-Bridge (CB) RAM by Filament Surface Relaxation

2012 4th IEEE International Memory Workshop ◽

10.1109/imw.2012.6213666 ◽

2012 ◽

Author(s):

S. Choi ◽

S. Ambrogio ◽

S. Balatti ◽

F. Nardi ◽

D. Ielmini

Keyword(s):

Surface Relaxation ◽

Drift Model ◽

Conductive Bridge ◽

Filament Surface

Download Full-text

Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory

2012 4th IEEE International Memory Workshop ◽

10.1109/imw.2012.6213679 ◽

2012 ◽

Author(s):

Mattia Boniardi ◽

Andrea Redaelli ◽

Innocenzo Tortorelli ◽

Simone Lavizzari ◽

Agostino Pirovano ◽

...

Keyword(s):

Thermal Behavior ◽

Phase Change ◽

Phase Change Memory ◽

Download Full-text

Embedded Nonvolatile Memories: A Key Enabler for Distributed Intelligence

2012 4th IEEE International Memory Workshop ◽

10.1109/imw.2012.6213637 ◽

2012 ◽

Author(s):

K. Baker

Keyword(s):

Distributed Intelligence ◽

Nonvolatile Memories

Download Full-text

Sub-Nanosecond Precessional Switching in a MRAM Cell with a Perpendicular Polarizer

2012 4th IEEE International Memory Workshop ◽

10.1109/imw.2012.6213651 ◽

2012 ◽

Author(s):

M. Marins de Castro ◽

B. Lacoste ◽

R. C. Sousa ◽

T. Devolder ◽

L. D. Buda-Prejbeanu ◽

...

Keyword(s):

Precessional Switching

Download Full-text