Telomere: Real-Time NAND Flash Storage

Modern solid-state disks achieve high data transfer rates due to their massive internal parallelism. However, out-of-place updates for flash memory incur garbage collection costs when valid data needs to be copied during space reclamation. The root cause of this extra cost is that solid-state disks are not always able to accurately determine data lifetime and group together data that expires before the space needs to be reclaimed. Real-time systems found in autonomous vehicles, industrial control systems, and assembly-line robots store data from hundreds of sensors and often have predictable data lifetimes. These systems require guaranteed high storage bandwidth for read and write operations by mission-critical real-time tasks. In this article, we depart from the traditional block device interface to guarantee the high throughput needed to process large volumes of data. Using data lifetime information from the application layer, our proposed real-time design, called Telomere , is able to intelligently lay out data in NAND flash memory and eliminate valid page copies during garbage collection. Telomere’s real-time admission control is able to guarantee tasks their required read and write operations within their periods. Under randomly generated tasksets containing 500 tasks, Telomere achieves 30% higher throughput with a 5% storage cost compared to pre-existing techniques.

Modeling of GIDL–Assisted Erase in 3–D NAND Flash Memory Arrays and Its Employment in NOR Flash–Based Spiking Neural Networks

Since the very first introduction of three-dimensional (3–D) vertical-channel (VC) NAND Flash memory arrays, gate-induced drain leakage (GIDL) current has been suggested as a solution to increase the string channel potential to trigger the erase operation. Thanks to that erase scheme, the memory array can be built directly on the top of a $$n^+$$ n + plate, without requiring any p-doped region to contact the string channel and therefore allowing to simplify the manufacturing process and increase the array integration density. For those reasons, the understanding of the physical phenomena occurring in the string when GIDL is triggered is important for the proper design of the cell structure and of the voltage waveforms adopted during erase. Even though a detailed comprehension of the GIDL phenomenology can be achieved by means of technology computer-aided design (TCAD) simulations, they are usually time and resource consuming, especially when realistic string structures with many word-lines (WLs) are considered. In this chapter, an analysis of the GIDL-assisted erase in 3–D VC nand memory arrays is presented. First, the evolution of the string potential and GIDL current during erase is investigated by means of TCAD simulations; then, a compact model able to reproduce both the string dynamics and the threshold voltage transients with reduced computational effort is presented. The developed compact model is proven to be a valuable tool for the optimization of the array performance during erase assisted by GIDL. Then, the idea of taking advantage of GIDL for the erase operation is exported to the context of spiking neural networks (SNNs) based on NOR Flash memory arrays, which require operational schemes that allow single-cell selectivity during both cell program and cell erase. To overcome the block erase typical of nor Flash memory arrays based on Fowler-Nordheim tunneling, a new erase scheme that triggers GIDL in the NOR Flash cell and exploits hot-hole injection (HHI) at its drain side to accomplish the erase operation is presented. Using that scheme, spike-timing dependent plasticity (STDP) is implemented in a mainstream NOR Flash array and array learning is successfully demonstrated in a prototype SNN. The achieved results represent an important step for the development of large-scale neuromorphic systems based on mature and reliable memory technologies.

Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel

The memory characteristics of a flash memory device using c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The CAAC-IGZO thin films can replace the current poly-silicon channel, which has reduced mobility because of grain-induced degradation. The CAAC-IGZO thin films were achieved using a tantalum catalyst layer with annealing. A thin film transistor (TFT) with SiO2/Si3N4/Al2O3 and CAAC-IGZO thin films, where Al2O3 was used for the tunneling layer, was evaluated for a flash memory application and compared with a device using an amorphous IGZO (a-IGZO) channel. A source and drain using indium-tin oxide and aluminum were also evaluated for TFT flash memory devices with crystallized and amorphous channel materials. Compared with the a-IGZO device, higher on-current (Ion), improved field effect carrier mobility (μFE), a lower body trap (Nss), a wider memory window (ΔVth), and better retention and endurance characteristics were attained using the CAAC-IGZO device.

Editorial for the Special Issue on Flash Memory Devices

Flash memory devices represented a breakthrough in the storage industry since their inception in the mid-1980s, and innovation is still ongoing after more than 35 years [...]

Advanced High Frequency In-Bit Vibration Measurement Including Independent, Spatially Separated Sensors for Proper Resolution of Vibration Components Including Lateral, Radial, and Tangential Acceleration

Vibration measurement has become ubiquitous in drilling. Focus of drilling enhancement has expanded from traditional lateral and stick slip assessment to include torsional oscillations on motors, and high-frequency torsional oscillations (HFTO). Recent publications have highlighted the importance of these higher frequency measurements to analyze drilling dynamics and diagnose dysfunctions which can cause tool failures. A new vibration recorder will be presented which is capable of sampling at 2 kHz and higher to analyze non-linear transient dysfunctions. Most in-bit vibration measurement options utilize a single unsynchronized triaxial accelerometer and low speed gyro. This design practice inherits specific challenges to the measurement and prevents the ability to decouple lateral from angular acceleration. Use of two sets of symmetrically placed (180 degree opposing) accelerometers has been in practice, but design constraints limit this approach to larger bits. Utilization of a new, outer diameter (OD) mounted vibration recorder for slim hole bits/BHAs with multiple spatially separated triaxial accelerometers, and a high-speed precision gyro will be described and evaluated with a comparison to other commercially available options. Downhole vibration recorders have existed for over 20 years providing conventional drilling dynamics evaluation. These devices suffered from hardware limitations which constrained the customer to spaced out snapshots of time rather than continuous observation and required separate research modules to cover high frequency needs. This paper presents case studies utilizing a new vibration recorder which can cover these two customer needs in one device. Drilling Engineers desire a rapid turnaround macro view of synchronized downhole and surface data for offset well parameter optimization while research engineers desire a micro view with kilohertz range sample rate for a comprehensive understanding of all possible dysfunctions including HFTO, and high frequency shock, along with the capacity to research geology prediction techniques including fracture identification. Use of an advanced cloud-based software suite will be illustrated for a rapid high-level view of the full run with benchmarking capability of offset wells. Case study observations include stick slip identification covering 0 to above 600 rpm using a single gyroscope, and HFTO identification with accurate decoupling of tangential acceleration vs radial and lateral. Having the ability to satisfy both objectives with one device is new to the industry and presents a step change in capability. A new, advanced vibration recorder is detailed which includes synchronized, spatially separated triaxial accelerometers, a triaxial shock sensor, a highspeed triaxial gyroscope, and temperature sensors. With 5 gigabytes of high temperature flash memory, more than 2 kHz sample rate for burst data and 1s period for downhole processed data, logged downhole recordings can cover greater than 200 hrs of drilling and may be available for analysis within minutes from drilling completion.