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2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
Latest Publications
TOTAL DOCUMENTS
88
(FIVE YEARS 0)
H-INDEX
3
(FIVE YEARS 0)
Published By IEEE
9781538676271
Latest Documents
Most Cited Documents
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Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Exploration of Fine-Grain Body Bias Control in Many-Core Processor Arrays
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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10.1109/s3s.2018.8640135
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2018
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Author(s):
Bevan Baas
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Brent Bohnenstiehl
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Jin Cui
Keyword(s):
Fine Grain
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Processor Arrays
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Many Core
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Body Bias
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Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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10.1109/s3s.2018.8640168
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2018
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Cited By ~ 1
Author(s):
Takuro Sakamoto
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Takumi Ohashi
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Kentaro Matsuura
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Iriya Muneta
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Kuniyuki Kakushima
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...
Keyword(s):
Hall Effect
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Particle Energy
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Mos2 Film
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Fully Depleted SOI technologies from digital to RF and beyond
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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10.1109/s3s.2018.8640138
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2018
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Author(s):
Jean-Pierre Raskin
Keyword(s):
Fully Depleted
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[Front matter]
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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10.1109/s3s.2018.8640141
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2018
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A RRAM-based Coarse Grain Reconfigurable Array for Neural Network Accelerators
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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10.1109/s3s.2018.8640182
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2018
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Author(s):
Zhengyu Chen
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Hai Zhou
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Jie Gu
Keyword(s):
Neural Network
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Coarse Grain
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Reconfigurable Array
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A 23 GHz Low-Phase-Noise Transformer-Feedback VCO in 22nm FD-SOI with a FOMT of 191dBc/Hz
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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10.1109/s3s.2018.8640187
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2018
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Cited By ~ 3
Author(s):
Zhiwei Zong
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Cheng-Hsueh Tsai
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Federico Pepe
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Giovanni Mangraviti
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Yao Liu
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...
Keyword(s):
Phase Noise
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Transformer Feedback
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Low Phase Noise
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Radiation-Hardened Flip-Flops with Small Area and Delay Overheads Using Guard-Gates in FDSOI Processes
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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10.1109/s3s.2018.8640212
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2018
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Author(s):
Kodai Yamada
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Jun Furuta
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Kazutoshi Kobayashi
Keyword(s):
Small Area
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Radiation Hardened
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TSV Induced Stress Model and Its Application in Delay Estimation
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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10.1109/s3s.2018.8640207
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2018
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Author(s):
Raghav Chawla
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Sarita Yadav
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Arvind Sharma
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Baljit Kaur
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Rajendra Pratap
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...
Keyword(s):
Delay Estimation
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Stress Model
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Induced Stress
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8-T ULV SRAM macro in 28nm FDSOI with 7.4 pW/bit retention power and back-biased-scalable speed/energy trade-off
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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10.1109/s3s.2018.8640170
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2018
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Cited By ~ 2
Author(s):
Thomas Haine
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Denis Flandre
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David Bol
Keyword(s):
Trade Off
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Energy Trade
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Back bias influence on low-frequency noise of n-type nanowires SOI MOSFETs
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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10.1109/s3s.2018.8640178
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2018
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Author(s):
Allan Roberto Molto
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Bruna Cardoso Paz
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Rodrigo Trevisoli Doria
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Michelly de Souza
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Marcelo Antonio Pavanello
Keyword(s):
Low Frequency
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Frequency Noise
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Low Frequency Noise
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