body bias
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2021 ◽  
Author(s):  
Nitu Rao ◽  
Vimal Kumar Mishra

Abstract This paper presents the photoelectrical performance evaluation of proposed intended source Ultra Thin Body Bias (UTBB) 1T-FDSOI based image sensor and also a comparative analysis has done with conventional 1T-UTBB based image sensor [1]. The photoelectrical conversion in proposed image sensor is achieved by utilizing back biasing in intended source UTBB FDSOI based MOSFET. In the proposed intended source Ultra Thin Body Bias (UTBB) 1T-FDSOI based image sensor, the photoelectrical conversion is done within the substrate region (well region) and that signal is read out by MOSFET placed on SOI substrate. The comparative analysis between proposed image sensor and conventional 1T-UTBB based image sensor has performed on the basis of various parameters such as back-bias voltage, thickness of buried oxide (BOX) layer and doping concentration. In this investigation the proposed image sensor has found better light sensitivity in contrast with conventional image sensor. The performance evaluation of proposed image sensor has done by TCAD simulations.


Author(s):  
Jiayang Zhang ◽  
Zirui Wang ◽  
Runsheng Wang ◽  
Zixuan Sun ◽  
Ru Huang

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1383
Author(s):  
Francesco Centurelli ◽  
Giuseppe Scotti ◽  
Gaetano Palumbo

Two frequency divider architectures in the Folded MOS Current Mode Logic which allow to operate at ultra-low voltage thanks to forward body bias are presented, analyzed, and compared. The first considered architecture exploits nType and pType divide-by-two building blocks (DIV2s) without level shifters, whereas the second one is based on the cascade of nType DIV2s with input level shifter. Both the architectures have been previously proposed by the same authors with higher supply voltages, but are able to work at a supply voltage as low as 0.5 V due to the threshold lowering allowed by forward body bias. For each architecture, analytical design strategies to optimize the divider under different operation scenarios are considered and a comparison among all the treated case studies is presented. Simulation results considering a commercial 28 nm FDSOI CMOS process are reported to confirm the advantages and features of the different architectures and design strategies. The analysis show that the use of the forward body bias allows to design frequency dividers which have the best efficiency. Moreover, we have found that the frequency divider architecture based on nType and pType DIV2s without level shifter provides always better performance both in terms of speed and power consumption approaching about 17 GHz of maximum operating frequency with less than 30 μW power consumption.


2021 ◽  
Author(s):  
Ahmad Fariz Hasan ◽  
Sohiful Anuar Zainol Murad ◽  
Faizah Abu Bakar

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