Non-Stoichiometry in Semiconductors
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DLTS investigation of the defect chemistry of non-stoichiometric CuInSe2

Non-Stoichiometry in Semiconductors ◽

10.1016/b978-0-444-89355-0.50040-5 ◽

1992 ◽

pp. 281-286

Author(s):

H.J. Möller ◽

E. Rodak

Keyword(s):

Defect Chemistry

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Chemical and structural characterization of thin films of CuInSe2

Non-Stoichiometry in Semiconductors ◽

10.1016/b978-0-444-89355-0.50039-9 ◽

1992 ◽

pp. 275-280

Author(s):

B.H. Tseng ◽

C.A. Wert

Keyword(s):

Structural Characterization

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Direct observation of the electrical activity of the EL2 center in its metastable configuration in Ga1-xAlxAs alloys

Non-Stoichiometry in Semiconductors ◽

10.1016/b978-0-444-89355-0.50031-4 ◽

1992 ◽

pp. 217-222

Author(s):

G. Brémond ◽

G. Guillot ◽

D. Stievenard ◽

R. Azoulay

Keyword(s):

Electrical Activity ◽

Direct Observation

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ODMR of stoichiometry defects in III-V semiconductors

Non-Stoichiometry in Semiconductors ◽

10.1016/b978-0-444-89355-0.50028-4 ◽

1992 ◽

pp. 193-204 ◽

Author(s):

J.-M. Spaeth ◽

M. Fockele ◽

K. Krambrock

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Influence of the InP-substrate temperature on the properties of MBE grown Al0.48In0.52 As layers

Non-Stoichiometry in Semiconductors ◽

10.1016/b978-0-444-89355-0.50024-7 ◽

1992 ◽

pp. 167-172

Author(s):

Eric Tournié ◽

Yong-Hang Zhang ◽

Klaus Ploog

Keyword(s):

Substrate Temperature ◽

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CuInS2 grown under elevated pressures; Part 1: Structural and defect characterization

Non-Stoichiometry in Semiconductors ◽

10.1016/b978-0-444-89355-0.50019-3 ◽

1992 ◽

pp. 125-131

Author(s):

M.L. Fearheiley ◽

N. Dietz ◽

S. Schroetter ◽

H.J. Lewerenz

Keyword(s):

Defect Characterization ◽

Elevated Pressures

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Crystals of CuInSe2 with Controlled Deviations from Stoichiometry

Non-Stoichiometry in Semiconductors ◽

10.1016/b978-0-444-89355-0.50018-1 ◽

1992 ◽

pp. 119-124 ◽

Author(s):

L.S. Yip ◽

W.S. Weng ◽

Z.A. Shukri ◽

I. Shih ◽

C.H. Champness

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A MODEL FOR THE PHASE EXTENT OF GALLIUM ARSENIDE DERIVED FROM EXPERIMENTAL DOPANT SOLUBILITY DATA

Non-Stoichiometry in Semiconductors ◽

10.1016/b978-0-444-89355-0.50010-7 ◽

1992 ◽

pp. 47-57

Author(s):

D T J Hurle

Keyword(s):

Gallium Arsenide ◽

Solubility Data

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Non-stoichiometry and aspects of heavy doping in GaAs revealed by X-ray quasi-forbidden reflection (XFR) method

Non-Stoichiometry in Semiconductors ◽

10.1016/b978-0-444-89355-0.50008-9 ◽

1992 ◽

pp. 27-38

Author(s):

Isao Fujimoto

Keyword(s):

X Ray ◽

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Copyright

Non-Stoichiometry in Semiconductors ◽

10.1016/b978-0-444-89355-0.50003-x ◽

1992 ◽

pp. iv

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