A MODEL FOR THE PHASE EXTENT OF GALLIUM ARSENIDE DERIVED FROM EXPERIMENTAL DOPANT SOLUBILITY DATA

1992 ◽  
pp. 47-57
Author(s):  
D T J Hurle
Keyword(s):  
Gallium Arsenide ◽  
Solubility Data

The solubility of calcium carbonate  in green liquor handling systems

TAPPI Journal ◽  
2019 ◽  
Vol 18 (10) ◽  
pp. 595-602
Author(s):  
ALISHA GIGLIO ◽  
VLADIMIROS G. PAPANGELAKIS ◽  
HONGHI TRAN
Keyword(s):  
Calcium Carbonate ◽  
Systematic Study ◽  
Kraft Pulp ◽  
Thermodynamic Simulation ◽  
Solubility Data ◽  
Pulp Mills ◽  
Persistent Problem ◽  
Green Liquor ◽  
Kraft Pulp Mills ◽  
Salt Systems

The formation of hard calcite (CaCO3) scale in green liquor handling systems is a persistent problem in many kraft pulp mills. CaCO3 precipitates when its concentration in the green liquor exceeds its solubility. While the solubility of CaCO3 in water is well known, it is not so in the highly alkaline green liquor environment. A systematic study was conducted to determine the solubility of CaCO3 in green liquor as a function of temperature, total titratable alkali (TTA), causticity, and sulfidity. The results show that the solubility increases with increased temperature, increased TTA, decreased causticity, and decreased sulfidity. The new solubility data was incorporated into OLI (a thermodynamic simulation program for aqueous salt systems) to generate a series of CaCO3 solubility curves for various green liquor conditions. The results help explain how calcite scale forms in green liquor handling systems.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

Gallium Arsenide Integrated Circuits Decapsulation Technique Using Mixed Acid Chemistry For Die-Level Failure Analysis

2018 ◽  
Author(s):  
Harold Jeffrey M. Consigo ◽  
Ricardo S. Calanog ◽  
Melissa O. Caseria
Keyword(s):  
Gallium Arsenide ◽  
Sulfuric Acid ◽  
Nitric Acid ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Mixed Acid ◽  
Optimum Parameters ◽  
Plastic Package ◽  
Fuming Nitric Acid ◽  
Concentrated Sulfuric Acid

Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

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