69th Device Research Conference
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9781612842431
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic gm of 1105 mS/mm

2011 ◽  
Author(s):  
Nidhi ◽  
S. Dasgupta ◽  
J. Lu ◽  
F. Wu ◽  
S. Keller ◽  
...  
Keyword(s):  
Delay Analysis

Hole mobility enhancement in uniaxially strained SiGe FINFETs: Analysis and prospects

2011 ◽  
Author(s):  
R. Bijesh ◽  
I. Ok ◽  
M. Baykan ◽  
C. Hobbs ◽  
P. Majhi ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Strained Sige

Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes

2011 ◽  
Author(s):  
Daniel A. Haeger ◽  
Casey Holder ◽  
Robert M. Farrell ◽  
Po Shan Hsu ◽  
Kathryn M. Kelchner ◽  
...  
Keyword(s):  
Laser Diodes

Lateral carrier injection with n-type modulation-doped quantum wells in VCSELs

2011 ◽  
Author(s):  
Chin-Han Lin ◽  
Yan Zheng ◽  
Matthias Gross ◽  
Mark J. W. Rodwell ◽  
Larry A. Coldren
Keyword(s):  
Quantum Wells ◽  
Carrier Injection

Spintronics search engines

2011 ◽  
Author(s):  
Hanan Dery ◽  
Berkehan Ciftcioglu ◽  
Yang Song ◽  
Hui Wu ◽  
Michael Huang ◽  
...  
Keyword(s):  
Search Engines

Experimental determination of dominant scattering mechanisms in scaled InAsSb quantum well

2011 ◽  
Author(s):  
A. Agrawal ◽  
A. Ali ◽  
R. Misra ◽  
P. E. Schiffer ◽  
B. R. Bennett ◽  
...  
Keyword(s):  
Quantum Well ◽  
Experimental Determination ◽  
Scattering Mechanisms

First AlN/GaN HEMTs power measurement at 18 GHz on Silicon substrate

2011 ◽  
Author(s):  
F. Medjdoub ◽  
M. Zegaoui ◽  
D. Ducatteau ◽  
N. Rolland ◽  
P.A. Rolland
Keyword(s):  
Silicon Substrate ◽  
Power Measurement ◽  
Gan Hemts

Spin-torque switchable perpendicular magnetic junctions for solid-state memory

2011 ◽  
Author(s):  
J. Z. Sun ◽  
R. P. Robertazzi ◽  
J. J. Nowak ◽  
P. L. Trouilloud ◽  
G. Hu ◽  
...  
Keyword(s):  
Solid State ◽  
Spin Torque
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