IRE Transactions on Electron Devices
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Published By Institute Of Electrical And Electronics Engineers

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Avalanche breakdown in structurally perfect junctions in silicon

1962 ◽  
Vol 9 (6) ◽  
pp. 511-511
Author(s):  
A. Goetzberger ◽  
B. McDonald
Keyword(s):  
Avalanche Breakdown

Thermal instability in power transistors

1962 ◽  
Vol 9 (6) ◽  
pp. 506-506 ◽  
Author(s):  
R.M. Scarlett ◽  
W. Shockley
Keyword(s):  
Thermal Instability ◽  
Power Transistors

Heterojunctions in InP-GaAs

1962 ◽  
Vol 9 (6) ◽  
pp. 509-510 ◽  
Author(s):  
W.G. Oldham ◽  
A.G. Milnes

An adaptive semiconductor device

1962 ◽  
Vol 9 (6) ◽  
pp. 506-507 ◽  
Author(s):  
J.O. Kessler
Keyword(s):  
Semiconductor Device

Predicting transistor storage time for nonstep, quasi-voltage inputs

1962 ◽  
Vol 9 (6) ◽  
pp. 492-499 ◽  
Author(s):  
R.P. Nanavati ◽  
R.J. Wilfinger
Keyword(s):  
Storage Time

Avalanche breakdown characteristics of a diffused P-N junction

1962 ◽  
Vol 9 (6) ◽  
pp. 478-483 ◽  
Author(s):  
D.P. Kennedy ◽  
R.R. O'Brien
Keyword(s):  
Avalanche Breakdown
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