13th International Symposium on the Physical and Failure Analysis of Integrated Circuits
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74

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6

(FIVE YEARS 0)

Published By IEEE

1424402050, 1424402069

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Analysis of Failure Mechanism on Gate-Silicided and Gate-Non-Silicided, Drain/Source Silicide-blocked ESD NMOSFETs in a 65nm Bulk CMOS Technology

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.251045 ◽

2006 ◽

Author(s):

Junjun Li ◽

David Alvarez ◽

Kiran Chatty ◽

Michel Abou-khalil ◽

Robert Gauthier ◽

...

Keyword(s):

Failure Mechanism ◽

Cmos Technology

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Interface Characterization for Vertically Aligned Carbon Nanofibers for On-chip Interconnect Applications

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.251048 ◽

2006 ◽

Author(s):

Yusuke Ominami ◽

Quoc Ngo ◽

Makoto Suzuki ◽

Kevin Mcilwrath ◽

Konrad Jarausch ◽

...

Keyword(s):

Carbon Nanofibers ◽

Interface Characterization ◽

Vertically Aligned ◽

Vertically Aligned Carbon Nanofibers ◽

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Inductance Considerations of on-Chip Interconnections for Best Electrostatic Discharge Protection Performance

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.251020 ◽

2006 ◽

Author(s):

Sergey Sofer ◽

Yefim Fefer ◽

Yoram Shapira

Keyword(s):

Electrostatic Discharge ◽

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Lead frame Hillock-Induced Silicon Crack

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.251040 ◽

2006 ◽

Author(s):

R.C. Flores ◽

M.G. Fabia ◽

M.T. Nabong ◽

A.O. Soria ◽

C.B. Gabunas

Keyword(s):

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TEM application in the failure analysis of advanced 90 nm SOI-based IC devices

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.251031 ◽

2006 ◽

Author(s):

K. Li ◽

E. Er ◽

S. Zhao

Keyword(s):

Failure Analysis

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Impact of the PCB design on the crack risk of CSP assemblies subjected to temperature cycling and drop tests

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.251036 ◽

2006 ◽

Author(s):

H. Fremont ◽

M. Mura ◽

B. Plano ◽

W. Horaud ◽

Y. Danto

Keyword(s):

Temperature Cycling ◽

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Tiny Pitts are the Yield Major Killer Caused by Metal Contamination in Wet Bench Cleaning

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.251013 ◽

2006 ◽

Author(s):

Sheng-hsiung Chen ◽

Shen-li Chen ◽

Long-yeu Chung ◽

Wen-kuan Yeh

Keyword(s):

Metal Contamination

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Reliability Improvement in Multi-level Cu/SiOC Low k Integration

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.251009 ◽

2006 ◽

Author(s):

Y. W. Chen ◽

I.C. Chen ◽

Johnston Zou ◽

G. Zhang ◽

Steven Chen ◽

...

Keyword(s):

Reliability Improvement ◽

Multi Level ◽

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Low-k Dielectric Breakdown Improvement with Co(W,P) Cap Barrier

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.251008 ◽

2006 ◽

Author(s):

Tam Tan ◽

Jesica ◽

Chee Gan ◽

Nam Hwang ◽

Jeffrey Gambino

Keyword(s):

Dielectric Breakdown ◽

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The rules of the Rue Morgue: a decade later

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.251000 ◽

2006 ◽

Author(s):

G. Mura ◽

M. Vanzi ◽

G. Cassanelli ◽

F. Fantini

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