High-Density Livestock Operations, Crop Field Application of Manure, and Risk of Community-Associated Methicillin-ResistantStaphylococcus aureusInfection in Pennsylvania

High density brine drilling fluid has been widely applied in the high pressure and complex oil and gas fields. Effectively controlling high density brine drilling fluid loss is an important factor for reducing the reservoir damage and keeping well stability. Base on general drilling fluid formulations，the affecting factors of filtrate loss of high density brine drilling fluid were analysed through mass laboratory experiments. The results show that the main fctor was the content of caustic soda and bentonite, secondly the density and the shape of adding product. The combination of adding product is one of effective method to control the filtration property of high density brine drilling fluid. The results will provide reliable foundation for successful field application.

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First use of a Newly Developed High-Density Brine in an Oil-Based Screen Running Fluid in a Multilateral Extended Reach Well: Fluid Qualification, Formation Damage Testing, and Field Application, Offshore Norway

10.2118/199243-ms ◽

2020 ◽

Author(s):

B. Salmelid ◽

M. H. Strand ◽

D. Clinch ◽

C. Davis ◽

E. Jeurissen

Keyword(s):

Field Application ◽

High Density ◽

Formation Damage ◽

Extended Reach Well

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Study on Waterproof Lock Low Concentration High-Density Fracturing Fluid System and Its Field Application

Springer Series in Geomechanics and Geoengineering - Proceedings of the International Field Exploration and Development Conference 2020 ◽

10.1007/978-981-16-0761-5_13 ◽

2021 ◽

pp. 133-141

Author(s):

Liwei Wang ◽

Suzhen Li ◽

Zhanwei Yang ◽

Liao Wang ◽

Xiuling Han

Keyword(s):

Field Application ◽

High Density ◽

Fracturing Fluid ◽

Fluid System ◽

Low Concentration

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Insights into Field Application of EOR Techniques from Modeling of Tight Reservoirs with Complex High-Density Fracture Network

10.2118/200345-ms ◽

2020 ◽

Author(s):

Geng Niu ◽

David Schechter

Keyword(s):

Fracture Network ◽

Field Application ◽

High Density ◽

Tight Reservoirs

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High Density Fluids Customization and Field Application in Khursaniyah Challenging Wells

10.2118/183997-ms ◽

2017 ◽

Cited By ~ 4

Author(s):

Ahmed Gadalla ◽

Rafael Pino ◽

Peter Ezi ◽

Nadeer Zayer ◽

Mohammad Al Hudaithi ◽

...

Keyword(s):

Field Application ◽

High Density

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Planar defects in ordered (Ga,In)P

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106570 ◽

1988 ◽

Vol 46 ◽

pp. 902-903

Author(s):

S. McKernan ◽

C. B. Carter ◽

D. Bour ◽

J. R. Shealy

Keyword(s):

Electron Diffraction ◽

Vapor Phase ◽

Growth Direction ◽

High Density ◽

Ordered Structure ◽

Planar Defects ◽

Diffraction Patterns ◽

Ternary Semiconductors ◽

Anion Species ◽

Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138932 ◽

1995 ◽

Vol 53 ◽

pp. 512-513

Author(s):

L. Mulestagno ◽

J.C. Holzer ◽

P. Fraundorf

Keyword(s):

Sample Preparation ◽

Milling Time ◽

High Density ◽

Low Density ◽

Ion Milling ◽

High Quality ◽

Variable Angle ◽

Major Disadvantage ◽

Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

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