Abnormal Recrystallization Behavior of High Purity Aluminum Foil

Author(s):  
Guangjie Huang ◽  
Jing Zhang ◽  
Yunlei Wang ◽  
Qin Liu
2012 ◽  
pp. 1581-1585
Author(s):  
Guangjie Huang ◽  
Jing Zhang ◽  
Yunlei Wang ◽  
Qin Liu

2005 ◽  
Vol 55 (3) ◽  
pp. 142-146
Author(s):  
Harushige TSUBAKINO ◽  
Yuichiro YAMAMOTO ◽  
Atsushi YAMAMOTO ◽  
Michitaka TERASAWA ◽  
Tohru MITAMURA ◽  
...  

2004 ◽  
Vol 54 (12) ◽  
pp. 573-578 ◽  
Author(s):  
Naoki TAKATA ◽  
Fuyuki YOSHIDA ◽  
Ken-ichi IKEDA ◽  
Hideharu NAKASHIMA ◽  
Hiroshi ABE

2014 ◽  
Vol 654 ◽  
pp. 24-30
Author(s):  
Dan Lu Liu ◽  
Ren Gui Xiao ◽  
Teng Zou ◽  
Jian Zhong Wang ◽  
Jian Xin Cao ◽  
...  

High-purity aluminum foil was etched with DC pulse current in acids solutions at first time. Experiments indicated that tunnels morphology was influenced by current density, pulse duty-cycle and frequency of DC pulse current, tunnels began to grow when the current density reached to 0.8A cm-2, and tunnels grew along three directions to form a netlike construction in the surface of aluminum foil, which increased effectually surface areas of aluminum foil. In addition, when aluminum was etched in the solution of 1 N HCl +0.8 N HNO3,tunnels morphology shows that tunnel does not grow continually during DC pulse current etching, so it is a method to study the mechanism of tunnel growth, for example period of tunnel growth, velocity of tunnel growth. The experimental results are discussed according to tunnels morphology.


1962 ◽  
Vol 109 (9) ◽  
pp. 791 ◽  
Author(s):  
R. Bakish ◽  
E. Z. Borders ◽  
R. Kornhaas

2001 ◽  
Vol 51 (3) ◽  
pp. 182-187 ◽  
Author(s):  
Katsura KAJIHARA ◽  
Kenji TOKUDA ◽  
Yasuaki SUGIZAKI ◽  
Yuuichi SEKI

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